Mechanisms of Auger recombination in quantum wells

Zegrya, G. G.; Polkovnikov, Anatoli

doi:10.1134/1.558544

Cited by 38 publications

(25 citation statements)

References 17 publications

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“…We used 8×8 kP Hamiltonian [11] that takes interaction with the higher bands and terms arising from elastic stresses into account up to quadratic terms by the wave vector but neglects the relativistic linear terms and the term with heavy electron mass. For our calculations, we choose the following representation of the basis wave functions:…”

Section: Basic Equationsmentioning

confidence: 99%

“…One of the candidates for explaining these results is the process radiation intraband absorption process by holes with the transition to the spin-split (so) zone. In this paper, we will use the modification of the four-band Kane model [10] proposed by Polkovnikov and Zegrya [11,12], which is based on the use of the 8×8 kP Hamiltonian, and allows us to obtain explicit analytical expressions for energy spectra and wave functions of charge carriers, as well as matrix elements of transitions. The authors proposed a modification of this method, allowing to take into account the elastic stresses arising in mismatched heterostructures.…”

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confidence: 99%

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Intraband light absorption by holes in InGaAsP/InP quantum wells

Pavlov

Zegrya

2018

J. Phys.: Conf. Ser.

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Abstract.A microscopic analysis of the radiation intraband absorption mechanism by holes with their transition to a spin-split band for quantum wells based on InGaAsP/InP solid solutions is performed within the framework of the four-band Kane model. The calculation is made for two polarizations of the incident radiation: along the crystal growth axis and in the plane of the quantum well. It is shown that this process can be the main mechanism of internal radiation losses for quantum well lasers. It is also shown that the dependence of the absorption coefficient on the width of the quantum well has a maximum at a well width from 40 to 60 A. IntroductionThe mechanisms radiation intraband absorption mechanisms in QW lasers are studied both theoretically and experimentally for many years [6]. Experimental results [7,8] show that the laser radiation intraband absorption coefficient is substantially higher than predicted by the theory [9]. One of the candidates for explaining these results is the process radiation intraband absorption process by holes with the transition to the spin-split (so) zone. In this paper, we will use the modification of the four-band Kane model [10] proposed by Polkovnikov and Zegrya [11,12], which is based on the use of the 8×8 kP Hamiltonian, and allows us to obtain explicit analytical expressions for energy spectra and wave functions of charge carriers, as well as matrix elements of transitions. The authors proposed a modification of this method, allowing to take into account the elastic stresses arising in mismatched heterostructures. The aim of this work is to calculate the radiation intraband absorption coefficient by holes with their transition to the so-zone for QWs based on A3B5 semiconductors, and also to study the dependence of the results obtained on the electromagnetic wave polarization, temperature, hole concentration, and QW width. The calculations are based on the example of the InGaAsP/InP heterostructure, which is widely used in the construction of semiconductor lasers with a radiation wavelength of 1.55 μm, and the structure parameters are taken from [13]. Basic EquationsWe used 8×8 kP Hamiltonian [11] that takes interaction with the higher bands and terms arising from elastic stresses into account up to quadratic terms by the wave vector but neglects the relativistic linear terms and the term with heavy electron mass. For our calculations, we choose the following representation of the basis wave functions:

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Section: Basic Equationsmentioning

confidence: 99%

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confidence: 99%

Intraband light absorption by holes in InGaAsP/InP quantum wells

Pavlov

Zegrya

2018

J. Phys.: Conf. Ser.

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“…In quantum wells Auger recombination rate contains E −n g term [2], [3] while for bulk it is proportional to exp (−E g /kT ). We consider the quantum well with narrow bandgap and high carrier concentration.…”

Section: Introductionmentioning

confidence: 99%

“…Applying bias causes carrier injection into the well followed by Auger recombination. We consider the most probable type of Auger recombination in quantum wells-so-called CHCC-process [2] illustrated on Fig. 2.…”

Section: Introductionmentioning

confidence: 99%

Generation of the pure spin currentviaAuger recombination in Rashba quantum wells

Afanasiev

Greshnov

Zegrya

2015

J. Phys.: Conf. Ser.

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Abstract. We propose new non-optical mechanism of the pure spin current generation via Auger recombination in the quantum wells with Rashba spin-orbit coupling. It is shown that such process is allowed due to interference between the Coulomb matrix elements corresponding to two different transitions during Auger recombination, leading to non-diagonal transversal components of the spin current tensor, J R = J xy = −J yx . In the limit of low temperatures the total spin current is proportional to the Rashba constant γ R , spin relaxation time τs and the third power of both the concentration n, inverse quantum well width a −1 and E −2g . Estimations show that typical magnitude of the generated spin current by this way is much greater than the ones obtained using intraband optical excitation mechanisms and comparable with spin currents driven by interband optical excitation, provided that the quantum well bandgap is narrow enough (Eg < 0.5 eV).

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“…[2][3][4][5][6][7][8][9][10][11][12][13]21,22 However, in practice the roughness of this heterointerface is always present, in spite of advances in epitaxial crystal growth techniques such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD). 39,40 Specifically, for GaAs QWs with AlGaAs energy barrier layers the interface roughness is one to two monolayers (3-5 Å), 41 for InGaAs/InP QW/barriers it is one to four monolayers, 42 and InGaN/GaN QW/barriers it is one to six monolayers (3-18 Å).…”

Section: Introductionmentioning

confidence: 99%

Effect of interface roughness on Auger recombination in semiconductor quantum wells

et al. 2017

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Auger recombination in a semiconductor is a three-carrier process, wherein the energy from the recombination of an electron and hole pair promotes a third carrier to a higher energy state. In semiconductor quantum wells with increased carrier densities, the Auger recombination becomes an appreciable fraction of the total recombination rate and degrades luminescence efficiency. Gaining insight into the variables that influence Auger recombination in semiconductor quantum wells could lead to further advances in optoelectronic and electronic devices. Here we demonstrate the important role that interface roughness has on Auger recombination within quantum wells. Our computational studies find that as the ratio of interface roughness to quantum well thickness is increased, Auger recombination is significantly enhanced. Specifically, when considering a realistic interface roughness for an InGaN quantum well, the enhancement in Auger recombination rate over a quantum well with perfect heterointerfaces can be approximately four orders of magnitude.

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Mechanisms of Auger recombination in quantum wells

Cited by 38 publications

References 17 publications

Intraband light absorption by holes in InGaAsP/InP quantum wells

Intraband light absorption by holes in InGaAsP/InP quantum wells

Generation of the pure spin currentviaAuger recombination in Rashba quantum wells

Effect of interface roughness on Auger recombination in semiconductor quantum wells

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