Mechanisms of charge transfer and magnetoresistance in CuInSe2

Matiev, A. Kh.; Георгобиани, А. Н.; Kodin, V. V.; Matiev, M. A.

doi:10.3103/s1062873810090418

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2022

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“…From single crystals grown by the Bridgman-Stockbarger method, rectangular plates with dimensions of 5 x 5 x 0.1 mm3 were cut, which, after grinding and polishing, were etched in a saturated solution of 7K2Cr2O7 + 3H2SO4 in distilled water [12][13].…”

Section: Methodsmentioning

confidence: 99%

Electrophysical Properties of <i>N</i>-Cuinse Based Heterostructures

Matiyev

Uspazhiev

Matieva

et al. 2022

KEM

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By the method of thermal oxidation of n-type CuInSe2 crystals, n - n+ structures with a maximum absolute current photosensitivity of up to 10 mA / W were obtained at low rectification and no-load photovoltage. The used modes of thermal oxidation led to the formation of n-type layers on the surface of the n-CuInSe2 plates, the resistivity of which is 2-2.5 times higher concerning the initial substance. Measurements of the stationary current-voltage characteristics have shown that the structures obtained have a slight rectification K. All the structures obtained exhibit photosensitivity, which dominates when illuminated from the side of the layer in the spectral region of about 1 eV. The optimization of the process can reveal the technological possibilities of a significant improvement in the rectifying properties of isotypic structures based on CuInSe2.

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Section: Methodsmentioning

confidence: 99%