2019
DOI: 10.1109/tns.2018.2884537
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Mechanisms of Electron-Induced Single-Event Latchup

Abstract: In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and fu… Show more

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Cited by 7 publications
(2 citation statements)
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“…high Q crit with high-Z material near the SV in the hadron energy range from 200 MeV to 3 GeV due to fission reactions [33] and the impact of directly ionizing light charged particles such as protons [34] and muons [35]. Additional studies investigated SEEs induced by electro-and photonuclear reactions [36] and, via a Geant4-based extension, by neutrons in the 0.1-10 MeV neutron range [37].…”
Section: Monte Carlo Simulation Of Single Event Effectsmentioning
confidence: 99%
“…high Q crit with high-Z material near the SV in the hadron energy range from 200 MeV to 3 GeV due to fission reactions [33] and the impact of directly ionizing light charged particles such as protons [34] and muons [35]. Additional studies investigated SEEs induced by electro-and photonuclear reactions [36] and, via a Geant4-based extension, by neutrons in the 0.1-10 MeV neutron range [37].…”
Section: Monte Carlo Simulation Of Single Event Effectsmentioning
confidence: 99%
“…The CERN Linear Electron Accelerator for Research (CLEAR) [1] provides electron beams with energies in the 55-220 MeV range, allowing access from both CERN and external users for many applications. In the context of radiation effects to electronics (R2E), direct in-beam irradiations at CLEAR have been used to show that high-energy electrons can induce Single Event Upsets (SEUs) [2], latchups [3] and stuck bits [4] in memories. This work analyses the radiation field in off-beam positions near the beam dump of one of the CLEAR test stations, TeraHertz (THz), with focus on neutrons generated via photonuclear reactions in the dump block, that are capable of inducing SEUs in sensitive devices via indirect ionisation [5].…”
Section: Introductionmentioning
confidence: 99%