By combining high-resolution photoelectron spectroscopy and ab initio calculations, we show that different carbon clusters can be formed on Ir(111) upon low temperature molecular beam epitaxy using a solid state carbon source. Besides carbon monomers, also dimers, trimers and larger clusters are detected through C 1s core levels measurements. The spectroscopic signal of carbon monomers is then used as a fingerprint to detect their presence during the early stages of graphene growth by ethylene chemical vapor deposition at high temperature. We demonstrate that our spectroscopic approach can be employed to investigate the role of carbon monomers and dimers in the nucleation and growth of graphene on different metal surfaces. 3
IntroductionThe interest of the material's science community in carbon monomers (C1) and dimers (C2) has grown considerably in the last years because of their role in the synthesis of high-quality graphene (Gr) monolayers on solid surfaces 1-3 . Carbon clusters, especially those formed by a small number of atoms, play an important role in determining the different atomistic mechanisms for the epitaxial growth of graphene by means of chemical vapor deposition (CVD). The carbon monomers' concentration and the rate at which adatoms are generated from the hydrocarbon feedstock are relevant quantities for understanding the non-linear growth kinetics of Gr experimentally observed on different surfaces 4 . The control of monomer supersaturation is an effective approach to modify not only the growth rate, but also the morphology and orientation of the Gr islands 5 . In addition, C monomers are predicted to be essential for the growth of the graphene islands both through direct attachment to the Gr edges and through the formation and attachment of larger C clusters 6 .Apart from monomers, also dimers play an important role in the formation of high-quality Gr monolayers characterized by a low density of defects such as mono-and di-vacancies, disclinations, dislocations, and domain boundaries 7 . For example, according to theoretical calculations, in the case of copper surfaces, where dimers represent the dominant feeding species for Gr growth 8,9 , they have either a diffusion-or an attachment-limited aggregation behavior depending on the crystallographic surface orientation 10,11 . More specifically, while the rate determining step for Gr growth on Cu(111) is the energy barrier for dimer surface diffusion, in the case of Cu(100) the limit is given by the energy barrier for the attachment of C2 to both zig-zag and arm-chair terminated Gr edges. On the other hand, it has been predicted that the formation of dimers is energetically unfavorable on ideal and flat transition metal Besides their relevance for graphene epitaxial growth, C2 species are extremely important for the formation of all carbon-based three-dimensional materials 19 , for the synthesis of carbon quantum dots, and as building blocks for metal-alkynide and alkynide complexes 20,21 .