Mechanisms of particle removal from silicon wafer surface in wet chemical cleaning process

The quantitative description between zeta potential and fluorescent particle adsorption on Cu surface

“…It agrees well to the Derjaguin–Landau–Verwey–Overbeek theory and electrical double layer model. Debye constant that represents the reciprocal of double layer thickness is given as follows: where e is the fundamental charge, n A is the Avogadro constant, M is the ionic strength, ε is the permittivity of the liquid, k is the Boltzmann constant and T is the temperature. When ionic strength increases, Debye constant increases also.…”

A study of hydrogen peroxide decomposition in ammonia-peroxide mixtures (APM)

“…The conventional APM solution consists of NH 4 OH (29 wt.%), H 2 O 2 (30 wt.%) and de-ionized water in a volume ratio of 1:1:5 and is generally employed at elevated temperatures of 70-80°C. At elevated temperatures, APM solutions are unstable due to the decomposition of hydrogen peroxide and evaporative loss of ammonium hydroxide [5][6][7]. This change can lead to higher silicon etching, surface roughness and insufficient particle removal [8].…”

Molecular dynamics simulation of dense carbon dioxide fluid on amorphous silica surfaces

“…In advanced microelectronics industry, the wafer-cleaning process represents more than 1/4 of the elementary operations. It requires severe control of surface particle size, surface contamination, and roughness and is considered to be a key to the performance of the final device [5]. Especially, with fast development in modern computer speed, the new demand for computer chips of nanometer-length scale and high-aspect-ratio polymer feature will need to develop effective surface-cleaning technologies [4].…”