Mechanisms of pattern formation in grazing-incidence ion bombardment of Pt(111)

Hansen, Henri; Redinger, Alex; Meßlinger, Sebastian; Stoian, Georgiana; Rosandi, Yudi; Urbassek, Herbert M.; Linke, U.; Michely, Thomas

doi:10.1103/physrevb.73.235414

Cited by 49 publications

(47 citation statements)

References 62 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Grazing incidence ions may enter at ascending steps into the crystal and may be guided over long distances away from the step, thereby obtaining less violent pathways for energy loss ͑e.g., electronic͒ and resulting in less sputtering. While we have previously shown 4,5 that subsurface channeling is of crucial importance for pattern formation, we will see below that it is also responsible for significant variations of Y step with the polar and azimuthal angle within the zone of influence and with temperature.…”

Section: Geometrical Modelmentioning

confidence: 99%

“…The sample orientation is controlled by analyzing the angle between ͗110͘ oriented steps resulting from slip induced by tip crashes and a well developed ripple pattern fabricated according to the recipes of Ref. 4. The accuracy of azimuthal sample orientation is about Ϯ2°.…”

Section: Experimental and Computational Methodsmentioning

confidence: 99%

“…Molecular dynamics simulations show that vacancies are created not only in the upper terrace but also in the lower terrace and, to a certain extent, in the subsurface layers. 4,16 Due to the step-edge barrier for vacancies, the lower terrace vacancies do not anneal at the nearby ascending step edge 26,27 and thus form with significant probability vacancy islands. These islands grow through subsequent step-edge impacts in the direction of the ion beam to the large structures visible in Figs.…”

Section: Amentioning

confidence: 99%

“…The ability to create nanogrooves and ripple patterns [1][2][3][4][5][6] with tunable lateral periodicity and amplitude has several potential applications. The resulting morphology can be used as a template for the adsorption of large molecules, 7 for the manipulation of magnetism 8 or for tuning the chemical reactivity of catalytically active surfaces.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Step-edge sputtering through grazing incidence ions investigated by scanning tunneling microscopy and molecular dynamics simulations

et al. 2008

Self Cite

View full text Add to dashboard Cite

Scanning tunneling microscopy is used to quantify step-edge sputtering of Pt͑111͒ at 550 K by grazing incidence ion bombardment with 5 keV Ar + ions. For bombardment conditions causing negligible erosion on terraces, damage features associated with step bombardment allow us to visualize step retraction and thus to quantify the step-edge sputtering yield. An alternative method for step-edge yield determination, which is applicable under more general conditions, is the analysis of the concentration of ascending steps together with the removed amount as a function of ion fluence. Interestingly, the azimuthal direction of the impinging ions with respect to the surface significantly changes the sputtering yield at step edges. This change is attributed to the orientation dependence of subsurface channeling. Atomistic insight into step-edge sputtering and its azimuthal dependence is given by molecular dynamics simulations of ion impacts at 0 and 550 K. The simulations also demonstrate a strong dependence of the step-edge sputtering yield on temperature.

show abstract

Section: Geometrical Modelmentioning

confidence: 99%

Section: Experimental and Computational Methodsmentioning

confidence: 99%

Section: Amentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Step-edge sputtering through grazing incidence ions investigated by scanning tunneling microscopy and molecular dynamics simulations

et al. 2008

Self Cite

View full text Add to dashboard Cite

show abstract

“…If the ion scatters at a surface defect -such as an adsorbate or an adatom, or as in the present work, a surface step -a substantial amount of the ion energy may be transferred to the surface, inducing defect formation and sputtering. This mechanism has been investigated recently both by molecular-dynamics simulation and by experimental measurements based on scanning tunneling microscopy [1][2][3][4][5][6][7]. The phenomenon is of immediate interest to the field of the nanopatterning of thin films [8,9] with applications, e.g.…”

Section: Introductionmentioning

confidence: 99%

Competition of terrace and step-edge sputtering under oblique-incidence ion impact on a stepped Pt(111) surface

Rosandi

Redinger

Michely

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

Self Cite

View full text Add to dashboard Cite

a b s t r a c tUsing molecular-dynamics simulation, we study the sputtering of a Pt(1 1 1) surface under oblique and glancing incidence 5 keV Ar ions. For incidence angles larger than a critical angle # c , the projectile is reflected off the surface and the sputter yield is zero. We discuss the azimuth dependence of the critical angle # c with the help of the surface corrugation felt by the impinging ion. If a step exists on the surface, sputtering occurs also for glancing incidence # > # c . We demonstrate that for realistic step densities, the total sputtering of a stepped surface may be sizable even at glancing incidence.

show abstract

Sputtering of silicon by low‐energy oxygen bombardment studied by MD simulations

Philipp¹,

Wirtz²,

Kieffer

2012

Surface & Interface Analysis

View full text Add to dashboard Cite

In the field of secondary ion mass spectrometry, ion-matter interactions have been largely investigated by numerical simulations. For molecular dynamics simulations related to inorganic samples, mostly classical force fields assuming stable bonding structure have been used. In this paper, we will use a reactive force field capable of simulating the breaking and formation of chemical bonds. Important features of this force field for simulating systems that undergo significant structural reorganisation are (i) the ability to account for the redistribution of electron density upon ionization, formation, or breaking of bonds, through a charge transfer term, and (ii) the fact that the angular constraints dynamically adjust when a change in the coordination number of an atom occurs. In this work, we present results obtained for the simulation of low-energy oxygen bombardment of crystalline and amorphous silicon. Information on variation of sputtering yields, energy, and angular distributions as well as the emission of clusters are studied. Compared to normal force fields, ion-matter interactions as well as the sputtering of matter should be described more accurately, especially when using reactive primary ions (oxygen or cesium) at low impact energies.

show abstract

Mechanisms of pattern formation in grazing-incidence ion bombardment of Pt(111)

Cited by 49 publications

References 62 publications

Step-edge sputtering through grazing incidence ions investigated by scanning tunneling microscopy and molecular dynamics simulations

Step-edge sputtering through grazing incidence ions investigated by scanning tunneling microscopy and molecular dynamics simulations

Competition of terrace and step-edge sputtering under oblique-incidence ion impact on a stepped Pt(111) surface

Sputtering of silicon by low‐energy oxygen bombardment studied by MD simulations

Contact Info

Product

Resources

About