1994
DOI: 10.1016/0040-6090(94)90081-7
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Mechanisms of plasma polymerization of various silico-organic monomers

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Cited by 180 publications
(164 citation statements)
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“…Further evidence of OH groups comes from the peak at 930 cm −1 assigned to Si-OH stretching [32]. The shift of this peak to 920 cm −1 for 25 • C could be caused by the presence of the peak at 890 cm −1 corresponding to CH 3 rocking or Si-C stretching in Si-(CH 3 ) 2 [31,33]. Additional peaks in the region 1490-1780 cm −1 observed mainly for low temperatures were also associated with non-silica oxygen.…”
Section: Films On Silicon Substrates -Air Flow Rate Of 6 Sccmmentioning
confidence: 99%
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“…Further evidence of OH groups comes from the peak at 930 cm −1 assigned to Si-OH stretching [32]. The shift of this peak to 920 cm −1 for 25 • C could be caused by the presence of the peak at 890 cm −1 corresponding to CH 3 rocking or Si-C stretching in Si-(CH 3 ) 2 [31,33]. Additional peaks in the region 1490-1780 cm −1 observed mainly for low temperatures were also associated with non-silica oxygen.…”
Section: Films On Silicon Substrates -Air Flow Rate Of 6 Sccmmentioning
confidence: 99%
“…. 3) [27,31,32]. Further evidence of methylsilyl groups was revealed by a narrow peak at 1273-1281 cm −1 and weak peak at 1410 cm −1 associated with symmetric and asymmetric bending of Si-(CH 3 ) x , respectively [31,33].…”
Section: Films On Silicon Substrates -Air Flow Rate Of 6 Sccmmentioning
confidence: 99%
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“…In particular, plasma polymerization using organosilicon monomers, hexamethyldisiloxane (HMDSO), has come into wide use (2, 16,18,24,28,31,32). These monomers are of interest because of their high deposition rates and the ability of varying the deposition conditions to control their structure and properties.…”
mentioning
confidence: 99%
“…Two main absorption bands are at 780 and 1000 cm -1 . The first one is due to C Si  stretching vibration with possible minor contribution from CH 3 rocking in ) [10][11][12][13]. The absorption band at 1000 cm -1 in a -SiO 1-x : C x : H films is commonly ascribed to rocking/waging vibration modes in CH 2 radicals attached to silicon atoms [12].…”
Section: Ftirmentioning
confidence: 99%