2007
DOI: 10.1116/1.2804615
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Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas

Abstract: This work focuses on the impact of oxidizing and reducing ash chemistries on the modifications of two porous SiOCH films with varied porosities (8% [low porosity (lp)-SiOCH] and 45% [high porosity (hp)-SiOCH]). The ash processes have been performed on SiOCH blanket wafers in either reactive ion etching (RIE) or downstream (DS) reactors. The modifications of the remaining film after plasma exposures have been investigated using different analysis techniques such as x-ray photoelectron spectroscopy, Fourier tran… Show more

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Cited by 84 publications
(67 citation statements)
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“…With oxygen-based plasmas, the highly reactive O radicals from the plasma can diffuse inside the pores and convert the Si-CH 3 terminal bonds into hydrophilic Si-OH terminal bonds. 38,43 This modification is larger for highly porous materials and is favored by a high oxygen radicals density in the plasma. 44 Hydrogen-based plasmas are much less damaging than oxidizing plasmas; nevertheless, hydrogen radicals can still partially damage porous low-k dielectrics, particularly when V-UV photons assist the breaking of chemical bonds.…”
mentioning
confidence: 99%
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“…With oxygen-based plasmas, the highly reactive O radicals from the plasma can diffuse inside the pores and convert the Si-CH 3 terminal bonds into hydrophilic Si-OH terminal bonds. 38,43 This modification is larger for highly porous materials and is favored by a high oxygen radicals density in the plasma. 44 Hydrogen-based plasmas are much less damaging than oxidizing plasmas; nevertheless, hydrogen radicals can still partially damage porous low-k dielectrics, particularly when V-UV photons assist the breaking of chemical bonds.…”
mentioning
confidence: 99%
“…44 Hydrogen-based plasmas are much less damaging than oxidizing plasmas; nevertheless, hydrogen radicals can still partially damage porous low-k dielectrics, particularly when V-UV photons assist the breaking of chemical bonds. 37,38,43,44 In addition to plasma related steps, porous low-k dielectrics may also be damaged during the other processing steps required for the integration. During the metallic barrier deposition, metallic precursors can diffuse inside the pores and modify the material.…”
mentioning
confidence: 99%
“…[2][3][4][5][6][7][8][9] Second, highly porous low-k materials are a lot more prone to plasma damage due to a huge increase in accessible surface area. [10][11][12][13] Over the past 15 years, a lot of efforts have been devised to either prevent or mitigate plasma damage. 14 Among them, post-porosity plasma protection (P4) is the only strategy that takes advantage of the increasing porosity with decreasing dielectric constant in low-k materials.…”
Section: Introductionmentioning
confidence: 99%
“…, and Si-OSi suboxide (1021cm -1 ) bonds were reduced [19][20][21][22]. Moreover, the dielectric constant at 1 MHz increased from 2.50 to 3.26.…”
Section: Damages Induced By O 2 Plasmamentioning
confidence: 99%