Mechanisms Separating Time-Dependent and True Dose-Rate Effects in Irradiated Bipolar Oxides

Density functional theory (DFT) has emerged as a powerful tool to model defect properties and dynamics at the quantum mechanical level. Results from targeted DFT calculations can provide valuable insight into the atomistic nature of radiation-induced defect phenomena in microelectronics. This review describes the foundations of DFT, its implementations, and defect calculations. Illustrative examples from recent studies are presented in which DFT calculations, combined with experiments, have led to new insights into the microscopic processes that lead to the observed radiation response. These include GaN/AlGaN HEMTs, proton-induced interface-trap formation at the interface, and the role of hydrogen in enhanced low-dose-rate sensitivity (ELDRS) in bipolar devices and ICs.

Section: Eldrs In Bipolar Devices and Icssupporting

confidence: 92%

Section: Eldrs In Bipolar Devices and Icsmentioning

confidence: 99%

Quantum Mechanical Modeling of Radiation-Induced Defect Dynamics in Electronic Devices

Shen

Puzyrev

Fleetwood

et al. 2015

“…In order to focus in the effect of charge spatial redistribution and its extreme manifestation in the turn-around following a bias switch, the model disregards in its present form a number of phenomena known to be present along charge generation and trapping such as interface states generation [27]- [29], [65]- [67], tunneling [68]- [72], thermal annealing [72] [73], and flicker noise increment [74] [75]. Future work will be oriented to incorporate these physical processes to our model in order to make it a more complete tool for radiation effects analysis and for dosimeter design.…”

Section: B Spatial Distribution Of Hole Trapsmentioning

confidence: 99%

“…Only a few of them solve the Poisson and continuity equations together [22]- [26]. This approach together with the incorporation of hydrogen related defects proved to be useful to address dose rate effects [27]- [29].…”

Section: Introductionmentioning

confidence: 99%

Numerical Modeling of MOS Dosimeters Under Switched Bias Irradiations

Salomone

Faigon

Redin

2015

Techniques based on bias switching during the irradiation allow to extend the measurement range of MOS dosimeters. To well predict the response of these sensors under operation conditions it is mandatory to understand the physical phenomena involved. A physics-based numerical model is presented here to reproduce the response of MOS dosimeters under switched bias irradiations. Reported non-monotonic responses after a bias switch were previously explained by the presence of two types of hole traps with different characteristic times. The model presented in this work shows that this behavior can be explained by the spatial charge redistribution using a single trap. The electric field dependences of hole capture and neutralization rates are analyzed and compared with previous experimental results and models in the literature. The spatial distribution of hole traps within the oxide is also analyzed.

“…Devices soaked in 1% exhibited some ELDRS, while devices irradiated in air, which has a very low concentration, exhibited an order of magnitude less degradation due to HDR irradiation compared to LDR irradiations, or an enhancement factor of 10. Previous work presented a physics-based model [20], [21] that can quantitatively explain the different dose rate trends observed by [19] in different hydrogen environments. In this paper, we wish to spend time exploring the simulation approach and multi-scale physics that was employed to understand the physical phenomena.…”

Section: A Total Dose Degradation In Oxidesmentioning

confidence: 99%

Total Dose Radiation Damage: A Simulation Framework

Patrick

Rowsey

Law

2015

TCAD has been a useful tool for device design for decades. Radiation damage of devices requires accurate simulation of how charges move and are trapped, and the trap populations. This paper describes a simulation capability for these classes of problems and provides examples demonstrating its usefulness for investigation of device failure.Index Terms-III-V semiconductor materials, heterostructures, oxide degradation, power devices, semiconductor device modeling, semiconductor device reliability, semiconductor devices. 0018-9499