Mechanistic insights into transport properties of chemical vapour transport grown CuInS2 single crystal

Giri, Ranjan Kr.; Chaki, Sunil H.; Khimani, Ankurkumar J.; Deshpande, M. P.

doi:10.1016/j.jallcom.2023.170487

Cited by 14 publications

(12 citation statements)

References 64 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The zT values are found to increase with temperature. The maximum zT value is predicted as 1.04 10 -4 at 800 K, while it is 1.79 10 -5 at ambient temperature which agrees well with experimental findings of zT (~3.99 10 -4 at 423 K) [24]. It affirms to the fact that CIS is a good TE material to be employed in various TE applications.…”

Section: Figure 3 Variation Of Electronic Thermal Conductivity (K) Wi...supporting

confidence: 88%

The DFT study of thermoelectric properties of CuInS₂: A first principle approach

Giri,

Solanki,

Chaki

et al. 2023

IOP Conf. Ser.: Mater. Sci. Eng.

View full text Add to dashboard Cite

The generalised gradient approximation (GGA) and ultrasoft pseudopotential (US PP) methods to the function of Perdew-Burke-Ernzerhof (PBE) approach are utilised for density functional computation of CuInS2. It enables the prediction of thermoelectric characteristics, including Seebeck coefficient, thermal conductivity, electrical conductivity, magnetic susceptibility, specific heat, power factor and figure of merit by semi-classical Boltzmann approach. At 800 K, the highest magnitude of Seebeck coefficient is estimated as 6.91× 10-5 V·K-1. The maximum figure of merit (zT) is predicted as 1.04 × 10-4 at 800 K. Findings from this study suggest that CuInS2 has prospective to be used in the thermoelectric power generating sector.

show abstract

Section: Figure 3 Variation Of Electronic Thermal Conductivity (K) Wi...supporting

confidence: 88%

The DFT study of thermoelectric properties of CuInS₂: A first principle approach

Giri,

Solanki,

Chaki

et al. 2023

IOP Conf. Ser.: Mater. Sci. Eng.

View full text Add to dashboard Cite

show abstract

“…47–1372 in terms of the observed interplanar spacing and the corresponding main peaks/planes. According to the XRD results, the CuInS 2 nanospheres and nanowhiskers have a tetragonal unit cell structure with the following lattice parameters: a = b = 5.51 Å, c = 11.32 Å, and α = β = γ = 90°. , The EDAX spectra of nanospheres and nanowhiskers as shown in Figure b,c indicate that the materials are pure and no contaminants are present. The sonochemically synthesized CuInS 2 nanoforms seem to be spherical shaped as shown in Figure d, while the hydrothermally synthesized CuInS 2 shows a whisker-like structure under the scanning electron microscope; Figure e.…”

Section: Resultsmentioning

confidence: 99%

CuInS₂ Nanospheres and Nanowhiskers Enhancing the Electrochemical Properties of Sodium-Ion-Conducting Gel Polymer Electrolytes

Giri,

Patel,

Kumar

et al. 2024

ACS Appl. Nano Mater.

Self Cite

View full text Add to dashboard Cite

Herein, the authors report sodium-ion-conducting GPEs dispersed with and without copper indium disulfide (CuInS 2 ) nanoforms. The standard solution casting technique has been used to design sodium-ion-conducting GPEs containing the skeleton of the poly(methyl methacrylate) polymer, sodium tetrafluoroborate as the ionic conducting source, and ethylene carbonate as the plasticizer, while nanospheres and nanowhiskers CuInS 2 served as fillers. The performance of fabricated GPEs has been investigated using electrochemical, infrared, and thermal studies. Ac impedance studies reveal that the optimized GPE with 1 wt % nanowhiskers displays the highest ionic conductivity of 0.19 mS cm −1 at room temperature due to its more porous structure and symmetric variation of the number of particles with particle size. Dielectric and modulus investigations have been used to explore qualitative ion dynamics at varied frequencies. The total ion transport number is found to be >88%, while the confirmation of sodium-ion movement during anodic and cathodic cycles has been established using cyclic voltammetry (CV). The CV technique also indicates an operating voltage range of 3.4 V for the optimized GPE system. Fourier transform infrared spectroscopy (FTIR) revealed significant molecular interactions among CuInS 2 nanoforms, polymer matrix, solvent, and sodium salt. Thermal studies using differential scanning calorimetry (DSC) analysis indicate that the optimized GPE system retains the gel phase up to 388 K, while the thermogravimetric analysis (TGA) experiment suggests a considerably lesser weight loss of 9% when the temperature is ∼470 K. Overall, the introduction of porous CuInS 2 nanoforms within GPEs significantly improves the electrochemical properties while maintaining decent thermal properties.

show abstract

“…18 Theoretical calculations 15 show a possible ZT of 1.3 at a very high carrier concentration approaching 4 × 10 20 1/cm 3 charge carriers. However, both single crystals of CuInS 2 17 and Fe doping of CuInS 2 18 could only reach ZT values of 4 × 10 −4 and 2.5 × 10 −4 , respectively. Nanowires with heavy (20%) replacement of copper on the indium site reached a high power factor of 0.79 μW/mK 2 at room temperature.…”

Section: ■ Introductionmentioning

confidence: 94%

“…The efficiency of such a device can be estimated from the figure of merit of the materials Z , which is often coupled with the absolute temperature T to create the dimensionless figure of merit, ZT , which is calculated by ZT = S 2 /(κ·ρ), where S is the Seebeck coefficient, ρ is the electrical resistivity of the material, and κ is the thermal conductivity . Some of the materials that are interesting as thermoelectric materials are chalcogenides, − silicides, − Half-Heuslers, − and skutterudites. − In the past few years, chalcopyrites have also been investigated more closely. − …”

Section: Introductionmentioning

confidence: 99%

Transport Properties of Cd- and Ni-Doped CuIn(S,Se,Te)₂-Based Semiconductors

Sadia,

Lifshitz,

Sebaoun

et al. 2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Materials based on the chalcopyrite structure can form semiconductors with a wide range of properties. CuInX 2 , where X is S, Se, or Te, can be tuned by doping on sites such as the Cu site or the In site to change the amount of carrier concentration. One use for semiconductors such as CuInX 2 , with a wide array of doping options, is for thermoelectric applications. Thermoelectric materials are materials with the ability to convert thermal energy such as waste heat into useful electrical energy. By correctly doping CuInX 2 , it could allow for a high thermoelectric figure of merit, ZT, to be achieved. In this study, 0, 0.1%, 1%, and 5% Cd or Ni was used to dope on the In site or the Cu site, respectively. All samples showed single phase chalcopyrite structures. CuInS 2 showed n-type behavior throughout the doping range with both Cd and Ni acting as n-type dopants. CuInTe 2 showed p-type behavior throughout the doping range with Cd acting as an electron donor and Ni acting as an electron acceptor. CuInSe 2 showed n-type behavior, which changed to p-type due to both Cd and Ni acting as acceptors. It is possible that higher concentrations of Cd and Ni could still improve the thermoelectric properties of CuInS 2 with a maximum of ZT = 0.1 upon 5% Cd doping and of CuInSe 2 with ZT = 0.27 upon 5% nickel doping. CuInTe 2 was much more efficient with small amounts of Cd improving the ZT from 0.35 to 0.4.

show abstract

Mechanistic insights into transport properties of chemical vapour transport grown CuInS2 single crystal

Cited by 14 publications

References 64 publications

The DFT study of thermoelectric properties of CuInS₂: A first principle approach

The DFT study of thermoelectric properties of CuInS₂: A first principle approach

CuInS₂ Nanospheres and Nanowhiskers Enhancing the Electrochemical Properties of Sodium-Ion-Conducting Gel Polymer Electrolytes

Transport Properties of Cd- and Ni-Doped CuIn(S,Se,Te)₂-Based Semiconductors

Contact Info

Product

Resources

About

Mechanistic insights into transport properties of chemical vapour transport grown CuInS2 single crystal

Cited by 14 publications

References 64 publications

The DFT study of thermoelectric properties of CuInS2: A first principle approach

The DFT study of thermoelectric properties of CuInS2: A first principle approach

CuInS2 Nanospheres and Nanowhiskers Enhancing the Electrochemical Properties of Sodium-Ion-Conducting Gel Polymer Electrolytes

Transport Properties of Cd- and Ni-Doped CuIn(S,Se,Te)2-Based Semiconductors

Contact Info

Product

Resources

About

The DFT study of thermoelectric properties of CuInS₂: A first principle approach

The DFT study of thermoelectric properties of CuInS₂: A first principle approach

CuInS₂ Nanospheres and Nanowhiskers Enhancing the Electrochemical Properties of Sodium-Ion-Conducting Gel Polymer Electrolytes

Transport Properties of Cd- and Ni-Doped CuIn(S,Se,Te)₂-Based Semiconductors