2018
DOI: 10.1016/j.ijhydene.2018.02.121
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Mechanistic investigation on tuning the conductivity type of cuprous oxide (Cu2O) thin films via deposition potential

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Cited by 59 publications
(43 citation statements)
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“…The pristine copper-oxide films grown by using deposition voltages up to -1.0 V were found to be single phase Cu2O and those grown at -2.0 V and above (data not shown here) were found to be metallic copper (Cu) with (111) and ( 200) orientation (see the top panel in Figure 3(a)). Additionally, the surface morphology of metallic Cu revealed that it is composed of spherical shaped grains of dia.~ 1.0 ± 0.3 µm and significantly different from the morphology of Cu2O thin films as also seen by others 7 . In fact, a coherent photoactive layer with large grains is desirable for light harvesting applications due to the possible reduction of recombination at the grain boundaries.…”
Section: Resultsmentioning
confidence: 49%
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“…The pristine copper-oxide films grown by using deposition voltages up to -1.0 V were found to be single phase Cu2O and those grown at -2.0 V and above (data not shown here) were found to be metallic copper (Cu) with (111) and ( 200) orientation (see the top panel in Figure 3(a)). Additionally, the surface morphology of metallic Cu revealed that it is composed of spherical shaped grains of dia.~ 1.0 ± 0.3 µm and significantly different from the morphology of Cu2O thin films as also seen by others 7 . In fact, a coherent photoactive layer with large grains is desirable for light harvesting applications due to the possible reduction of recombination at the grain boundaries.…”
Section: Resultsmentioning
confidence: 49%
“…Figure 1 (b) shows the transient cathodic current during the electrodeposition of copper-oxide thin films at -0.8 V (black curve) and -1.5 V (green curve). The cathodic current at these two different deposition voltages are seen to be quite stable within the deposition span indicating a good and fast growth kinetic 7 . The thicknesses (t) of the copper-oxide films electrodeposited at -1.0 V for 20 min (t~8.08±0.19 µm), 40 min (t~8.08±0.19 µm), and 80 min (t~8.08±0.19 µm) are found to be almost uniform across the wide area of films as evident from Figure 1 (c).…”
Section: Resultsmentioning
confidence: 90%
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“…With the assistance of solar energy, pollutants are degraded by photocatalytic reactions and photons are converted into photocarriers in the solar cell . Hence, the semiconductor as the main component of solar energy conversion materials requires efficient light harvesting, stability, fast carrier generation and separation . TiO 2 semiconductor material possesses the well electrical and optical characteristics and is widely studied in environmental decontamination and energy conversion systems .…”
Section: Introductionmentioning
confidence: 99%