MECSELs with direct emission in the 760 nm to 810 nm spectral range: A single- and double-side pumping comparison and high-power continuous-wave operation

Thermal Behavior and Power Scaling Potential of Membrane External-Cavity Surface-Emitting Lasers (MECSELs)

“…As a conclusion, the values of the temperature increase generally do not differ much from each other. This is for example in accordance with the experimental comparison of SSP and DSP for a 577 nm thin gain membrane [28]. For membranes thicker than 1 µm, the curve saturates at ∼ 5.77 W/K.…”

“…Here, the main motivation behind DSP is the more symmetric temperature as well as charge carrier distribution that is created across the gain membrane when compared to SSP. While for a gain membrane with a small thickness of less than 1 µm the benefit is rather small [28], gain membranes with higher thicknesses can benefit more from DSP. This aspect has been recently simulated for a = 1.77 µm gain membrane, which is about 2 µm thick, using a one-dimensional thermal model [5].…”

“…The quantum defect differs by 1.7 percentage points only and the higher thermal conductivity of AlGaAs of ∼ 12 W/m•K can make a slight difference to the heat situation within the gain membrane [29]. On the other hand, the thermal resistances of the = 760 nm AlGaAs, sapphire-cooled MECSEL [28], the = 1.5 µm InAs/InP QD SiC-cooled MECSEL [6], and the = 1.77 µm InGaAlAs/InP diamond-cooled MECSEL [5] are in good agreement with the simulations. Although the thermal conductivities of the MECSELs included in Fig.…”

Semiconductor waveguide quantum well lasers

“…In our case the host substrate is a silicon carbide or oxidised silicon (Boron doped) substrate, the fabrication steps are the same regardless of the substrate. The fabrication steps follow the same recipe as in MECSELs used in [16,17] and the contact bond is good enough to withstand 10s of Watts of pump power when silicon carbide or sapphire is used as a supporting substrate [17,22].…”