Medieval Latin ed. by K.P. Harrington (review)

Photoluminescence and structural analysis of a-plane InGaN layers

“…One can further calculate a maximum indium content of 7% in the wells by using E InGaN g ðxÞ ¼ xE InN g þ ð1 À xÞE GaN g À bxð1 À xÞ, where E InGaN g ðxÞ represents the band gap energy of In x Ga 1Àx N; E InN g and E GaN g are the band gaps of InN and GaN, respectively, and b ¼ 3:6 eV is the bowing parameter [13]. This value for the bowing parameter fits well with our results based on XRD, however the value of the bowing parameter differs in the range of 50% in the literature [14,15]. The QW luminescence is relatively broad and shows FWHM values of 0.223 eV.…”

A Mystery Wrapped in an Enigma: Optical Properties of InGaN Alloys

“…This has not been reported, as far as I am aware. Using a confocal microscope to restrict the excitation volume to about 500 Â 500 Â 250 nm 3 (the film thickness) does not materially alter the spectrum of an InGaN epilayer, compared to that observed using large-area excitation [11]. Fig.…”

Stokes Shift and Band Gap Bowing in InxGa1-xN (0.060 ≤ x ≤ 0.105) Grown by Metalorganic Vapour Phase Epitaxy

“…3. It is reported a strong gap bowing, from both experimentally and first principles calculations, with values ranging from 2.6 eV to 5.9 eV by many researches [5,10] for indium composition x < 0.25 in In x Ga 1−x N. The large value and strong composition dependence of the bowing parameter can be attributed to strain within the structure. The indium composition dependence of the peak energy of the PL signal was also shown in Fig.…”

“…Originating from the phase separated In-rich region plays a significant role in the emission mechanism of nitride-based LEDs [8]. Although, there have been several publications giving In x Ga 1−x N band gap information, they show a significant dispersion with values for the bowing parameter ranging from 1 eV [9] to 5.9 eV [10]. This may be due to experimental difficulties related to the method used to measure optical gap.…”