Medium power C‐band array amplifier featured ultra low residual phase noise

Abstract

This article deals with a design and performance evaluation of a medium power C‐band array amplifier based on SiGe hetero‐junction bipolar transistors (HBT). The proposed power amplifier (PA) contains four identical HBT stages coupled by the means of compact power splitting/summing microstrip networks. The designed PA exhibits a very low phase noise level of −165 dBc/Hz at 1 kHz offset frequency, and it is distinguished by a high output power having P1dB = +26 dBm and high power added efficiency approaching to 40%. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 292–295, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24896