2013
DOI: 10.1016/j.orgel.2013.03.021
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Megahertz operation of flexible low-voltage organic thin-film transistors

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Cited by 73 publications
(60 citation statements)
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“…For transistors fabricated on PEN the transconductance increased from ∼26 to ∼53 µS as the W /L increased. These values are similar to those obtained by differentiating the transfer characteristic for V ds = V gs = −2 V. They also surpass the highest reported values to date [12] by a factor of 2 to 5.…”
Section: Resultssupporting
confidence: 88%
See 1 more Smart Citation
“…For transistors fabricated on PEN the transconductance increased from ∼26 to ∼53 µS as the W /L increased. These values are similar to those obtained by differentiating the transfer characteristic for V ds = V gs = −2 V. They also surpass the highest reported values to date [12] by a factor of 2 to 5.…”
Section: Resultssupporting
confidence: 88%
“…To date the main focus was on the reduction in L and the demonstration of digital circuits with high operation frequency [12], [13]. When OTFTs with L = 1 µm and W = 10 µm were used, the transconductance of 12 µS was achieved and ring oscillators based on such transistors exhibited megahertz operation [12]. In such a case the W /L ratio of 10 was used to minimize the transistor parasitic capacitances and thus realize high switching speed.…”
Section: Introductionmentioning
confidence: 99%
“…In the context of the reported literature these represent state-of-the-art values for solution-processed organic devices fabricated on plastic foil. [12][13][14][15][16][17][18][19][20][21] This is achieved without the need for a rigid substrate, using solution-processed dielectric and semiconductor, and is regardless of the relatively low effective mobility of these devices ( µ sat = 0.03-0.06 cm 2 V −1 s −1 ), highlighting the impact and importance of self-aligned, low stray capacitance architecture on device performance.…”
Section: Maximum Device Switching Speedmentioning
confidence: 97%
“…Only a handful of reports on OFET alternating current (AC) characterization use fabrication techniques that even partially fulfi l the requirements set out above. [12][13][14][15][16][17][18][19][20][21][22][23] However to build functional fl exible circuits it is important to understand how to reconcile device fabrication and performance. [24][25][26] This is a requirement if plastic electronics are to be implemented in applications such as radio frequency identifi cation (RFID) tags which operate at megahertz frequencies.…”
Section: Doi: 101002/aelm201500024mentioning
confidence: 99%
“…Solution-based mass-printing technologies have been reported [22,23] for organic LAE production. The best circuit performances, though, have been achieved using batch-processing approaches derived from silicon technology [5,[24][25][26] and applied under clean room conditions. Such processes, however, require many deposition and patterning steps.…”
Section: Introductionmentioning
confidence: 99%