2019
DOI: 10.1002/pssa.201900635
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Melt Spin Coating for X‐Ray‐Sensitive Hybrid Organic–Inorganic Layers of Small Carbazolyl‐Containing Molecules Blended with Tungsten

Abstract: For the first time, a blend of carbazolyl‐containing small molecules and tungsten particles for X‐ray‐sensitive layers is developed using the solvent‐free melt spin‐coating (MSC) method. The composite films fabricated on a glass substrate, using aluminum as electrodes, are applied for direct current conversion of X‐rays with high signal‐to‐noise ratio, reliable on–off switching characteristics, and short‐ and long‐term stability. To elucidate the processes of charge carrier generation by X‐rays, Monte Carlo si… Show more

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Cited by 7 publications
(7 citation statements)
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“…In general, researchers believe that the basic melt processing technology should be a good choice: the solvents can be avoided and the technology can be well matched with existing process equipment to prepare large-area thick active layers by roller or abrasive indentation on the common used thin-film transistor (TFT) or complementary metal-oxide-semiconductor transistor (CMOS) circuit. [32][33][34] Most recently, Pan et al prepared thick quasi-single crystal CsPbBr 3 films using melt processing (600 °C), [33] and Zhao et al prepared pixelated scintillator films by embedding the molten metal halide (390 °C) scintillator Cs 3 Cu 2 I 5 in anodized aluminum oxide (AAO). [35] However, the main hinderance to integration is the high processing temperature.…”
Section: Introductionmentioning
confidence: 99%
“…In general, researchers believe that the basic melt processing technology should be a good choice: the solvents can be avoided and the technology can be well matched with existing process equipment to prepare large-area thick active layers by roller or abrasive indentation on the common used thin-film transistor (TFT) or complementary metal-oxide-semiconductor transistor (CMOS) circuit. [32][33][34] Most recently, Pan et al prepared thick quasi-single crystal CsPbBr 3 films using melt processing (600 °C), [33] and Zhao et al prepared pixelated scintillator films by embedding the molten metal halide (390 °C) scintillator Cs 3 Cu 2 I 5 in anodized aluminum oxide (AAO). [35] However, the main hinderance to integration is the high processing temperature.…”
Section: Introductionmentioning
confidence: 99%
“…These observations suggest that the compounds have crystallized also in thin films. In principle, due to the IL‐nature of the compounds, solvent‐free spin‐coating of the molten materials [ 41 ] followed by fast cooling could be an alternative strategy to achieve thin films of higher quality. Alternatively, the SMs could be used as the minority guest in a blend with a majority (amorphous) host for the attainment of a uniform host‐guest film.…”
Section: Resultsmentioning
confidence: 99%
“…The immediate coordination of the Mn(II) was further investigated by Raman spectroscopy (SI, Figure S4-S6), as the metal-ligand vibrations of tetrahedrally coordinated Mn 2+ are infrared-as well as Raman-active. For distorted [MnBr 4 ] 2tetrahedra, as observed in the respective tetraalkylammonium compounds, [56,57] the totally symmetric A 1 Mn-Br stretching is typically found around 157 cm -1 and the F 2 modes between 205-225 cm -1 . 63 Indeed, for 1 the symmetric mode is observed at 158 cm -1 , whilst for 2 and 3 it is found at 156 cm -1 .…”
Section: Vibrational Spectroscopymentioning
confidence: 89%