A number of experimental studies of condensed matter assemblies with different types of chemical bonding will provide the focus of this work. Condensed compounds X(CH 3 ) 4 , with X = C, Si or Ge, are the first of such assemblies; two phase boundaries in the pressuretemperature plane being studied: melting and a solid phase boundary heralding orientational disordering of molecules still however on a lattice. Secondly, directionally bonded d-electron transition metals such as N i, P d and N b will be treated. Here, melting is the main focus, but the precursor transition is now the separation of a high-temperature ductile solid from a lower temperature mechanically brittle phase. A dislocation-mediated model of these transitions is discussed, leading into the third area of covalently bonded solids graphite and silicon. Here topological defect models again provide the focus; both dislocations and rotation-dislocations now being invoked. Some qualitative suggestions are made to interpret the melting curve of graphite subjected to high pressure.
MIRAMARE -TRIESTE September 2004
BackgroundMelting models and/or criteria have a long history and, naturally enough, have often focussed on simple crystals formed from almost spherical building blocks, condensed argon being a prime example.Here our aim is different and the focus of the present study will be on chemically bonded assemblies. We have chosen three specific areas by way of illustration, namely: I) Melting and a related lower temperature phase boundary of solid X(CH 3 ) 4 : X = C, Si, Ge as a function of pressure.II) Melting and associated physical properties in d-electron transition metals, examples referred to including the body-centred-cubic (bcc) element N b and the face-centred-cubic structures of P d and N i and III) Melting transition in graphite, and quite briefly also in silicon.As to the related precursor cooperative phenomena referred to in the title of this paper, in area I this concerns the phase boundary in solid X(CH 3 ) 4 which marks the separation, prior to melting, of a low-temperature orientationally ordered molecular phase, say at a given pressure, from a phase characterized by orientational disorder, with in both cases however the molecules still attached to the sites of a crystal lattice.In area II, the precursor transition to melting, say in the bcc transition metal N b referred to above, is the so-called brittle-to-ductile transition (BDT). A rule of thumb sometimes used by materials scientists, and detailed further below, at atmospheric pressure, relates grossly the temperature of this transition denoted by T BDT , to a fraction of the melting temperature T m .As to the third area, silicon is possibly the elemental solid in which the BDT has been most carefully studied experimentally. However, although a BDT seems not to have been observed at the time of writing in graphite, for presentational purposes a single graphene layer consisting of hexagons of C atoms with sp 2 hybridization provides a most useful starting point.With this ba...