Memory and Spin Injection Devices Involving Half Metals

Abstract

We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect. Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented. Spin injection devices made in thin film form are also suggested. These devices do not need any external magnetic field but make use of their own magnetization. Only a gate voltage is needed. The carriers are 100% spin polarized. Memory devices may potentially be smaller, faster, and less volatile than existing ones, and the injection devices may be much smaller and more efficient than existing spin injection devices.

Structural, Electronic, Magnetic and Vibrational Properties of Full-Heusler Ir2CrX (X = Si, Ge) Compounds

“…To construct the spintronic devices, usually a layer of half-metallic materials is grown on a substrate of semiconductor [42]. In this process, the lattice constant of half-metallic materials may be changed and phase state transitions from ferromagnetic to nonmagnetic occur.…”

Angular Dependence of Spin Transfer Switching in Spin Valve Nanopillar Based Heusler Alloy

“…Nowadays, the ferromagnetic Heusler alloy materials are of wide interest for the spintronic applications due to their various advantages such as high spin polarization, high MR ratio, high Curie temperature, and high magnetic moment [13][14][15][16]. Particularly, the spin valve using Co 2 FeAl 0.5 Si 0.5 (CFAS) Heusler alloy as the ferromagnetic electrode presented a high MR ratio of 6.9% with Ag spacer [17].…”

First-Principles Calculations on the Half-Metallicity of Rock-Salt Ferromagnetic FeO

“…Furthermore, they are selected as high quality magnetic electrodes, through which the highly spin-polarized current may be injected into semiconductors. Then spintronic semiconductor devices may be manufactured [4]. FeO, as one oxide of late transition metals, is the classic example of strongly correlated materials.…”