Memory Applications for the Intelligent Internet of Things

doi:10.1002/9781119298922.ch2

Memories for the Intelligent Internet of Things 2018

DOI: 10.1002/9781119298922.ch2

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Memory Applications for the Intelligent Internet of Things

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Cited by 3 publications

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Sub‐Microsecond Polarization Switching in (Al,Sc)N Ferroelectric Capacitors Grown on Complementary Metal–Oxide–Semiconductor‐Compatible Aluminum Electrodes

Wang¹,

Musavigharavi²,

Zheng³

et al. 2021

Physica Rapid Research Ltrs

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The frequency-dependent ferroelectric properties of 45 nm (Al,Sc)N films sputter deposited on complementary metal-oxide-semiconductor (CMOS)-compatible Al metal electrodes are measured and compared. Low in-plane compressive stress (À10 AE 20 MPa) is observed in (Al,Sc)N thin films deposited on Al electrodes. The (Al,Sc)N films exhibit an imprint in the measured coercive fields (E c ) of À4.3/þ5.3 MV cm À1 at 10 kHz. Utilizing positive-up negative-down (PUND) measurements, ferroelectric switching is observed within %200 ns of an applied voltage pulse, which demonstrates the ability of ferroelectric (Al,Sc)N to achieve the fast read/write speeds desired in memory devices.

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Sub‐Microsecond Polarization Switching in (Al,Sc)N Ferroelectric Capacitors Grown on Complementary Metal–Oxide–Semiconductor‐Compatible Aluminum Electrodes

Wang¹,

Musavigharavi²,

Zheng³

et al. 2021

Physica Rapid Research Ltrs

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Smart cities from low cost to expensive solutions under an optimal analysis

2023

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This scientific approach mainly aims to develop a smart city/smart community concept to objectively evaluate the progress of these organizational forms in relation to other classical/traditional forms of city organizations. The elaborated model allowed the construction of the dashboard of access actions in the smart city/smart community category on two levels of financial effort correlated with the effect on the sustainable development of smart cities. The validity of the proposed model and our approach was supported by the complex statistical analysis performed in this study. The research concluded that low-cost solutions are the most effective in supporting smart urban development. They should be followed by the other category of solutions, which implies more significant financial and managerial efforts as well as a higher rate of welfare growth for urban citizens. The main outcomes of this research include modelling solutions related to smart city development at a low-cost level and identifying the sensitivity elements that maximize the growth function. The implications of this research are to provide viable alternatives based on smart city development opportunities with medium and long-term effects on urban communities, economic sustainability, and translation into urban development rates. This study’s results are useful for all administrations ready for change that want the rapid implementation of the measures with beneficial effects on the community or which, through a strategic vision, aim to connect to the European objectives of sustainable growth and social welfare for citizens. Practically, this study is a tool for defining and implementing smart public policies at the urban level.

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The Future of Frontiers

Shackelford

2019

SSRN Journal

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Memory Applications for the Intelligent Internet of Things

Cited by 3 publications

References 33 publications

Sub‐Microsecond Polarization Switching in (Al,Sc)N Ferroelectric Capacitors Grown on Complementary Metal–Oxide–Semiconductor‐Compatible Aluminum Electrodes

Sub‐Microsecond Polarization Switching in (Al,Sc)N Ferroelectric Capacitors Grown on Complementary Metal–Oxide–Semiconductor‐Compatible Aluminum Electrodes

Smart cities from low cost to expensive solutions under an optimal analysis

The Future of Frontiers

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