Memory cell using bistable resistivity in amorphous As-Te-Ge film

Sie, C.

doi:10.31274/rtd-180813-1655

Cited by 5 publications

(2 citation statements)

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“…Ferroelectric Random Access Memory (FeRAM) [Hoya et al 2006] also promises better performance characteristics than flash, but lower storage density, capacity limitations, and higher cost issues remain to be addressed. On the other hand, Phase Change Memory (PCM [Sie 1969]) is a more imminent technology that has reached a level of maturity that permits deployment at commercial scale. Micron announced mass production of a 128Mbit PCM device in 2008, while Samsung announced the mass production of 512Mbit PCM device follow-on in 2009.…”

Section: Introductionmentioning

confidence: 99%

Evaluating Phase Change Memory for Enterprise Storage Systems

et al. 2014

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Storage systems based on Phase Change Memory (PCM) devices are beginning to generate considerable attention in both industry and academic communities. But whether the technology in its current state will be a commercially and technically viable alternative to entrenched technologies such as flash-based SSDs remains undecided. To address this, it is important to consider PCM SSD devices not just from a device standpoint, but also from a holistic perspective.This article presents the results of our performance study of a recent all-PCM SSD prototype. The average latency for a 4KiB random read is 6.7μs, which is about 16× faster than a comparable eMLC flash SSD. The distribution of I/O response times is also much narrower than flash SSD for both reads and writes. Based on the performance measurements and real-world workload traces, we explore two typical storage use cases: tiering and caching. We report that the IOPS/$ of a tiered storage system can be improved by 12-66% and the aggregate elapsed time of a server-side caching solution can be improved by up to 35% by adding PCM.Our results show that (even at current price points) PCM storage devices show promising performance as a new component in enterprise storage systems.

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Section: Introductionmentioning

confidence: 99%