Memory-compatible perpendicular magnetic tunnel junctions under bi-directional strobe write pulses: A method for generating true random number bits at high speed

Abstract

We propose an operation method of generating true random number bits with a perpendicular magnetic tunnel junction (pMTJ) already in use as a memory element in spin-transfer-torque driven magnetic random access memory technology. This method uses a set of regularly spaced (or intentionally irregularly spaced), minimum width, and bi-directional fast strobe-write pulses, with read operations after each write. The resulting bit-stream’s statistical properties are analyzed, and a few digital logic operation following the read is described that could significantly improve the resulting bit-streams variance and stability, insulating those from the raw variations of pMTJs.