Memory computing based on thermal memory elements

Abstract

The article analyses the possibility of using elements of thermal memory to create a system that allows to perform calculations in memory. Such a computing system is built on devices that are used simultaneously for storing input data, performing a logical operation, and storing the output result. The authors conclude that it is possible to emulate this behaviour by using thermal memory elements with dielectric (SiO2) by a layer of thermal insulation. Special attention is paid to the logic gates of computing systems and their realisation on the basis of thermal memory elements. Simulation modelling of the work of such elements is carried out on the ANSYS Workbanch platform using the Transient Thermal module for non-stationary thermal calculations. On the basis of the modelling, the possibility of creating two basic logic gates “AND” and “OR” is established. The results can be used to create more integrated structures, such as artificial neural networks.

Estimation of an Extent of Sinusoidal Voltage Waveform Distortion Using Parametric and Nonparametric Multiple-Hypothesis Sequential Testing in Devices for Automatic Control of Power Quality Indices

“…• The features of preliminary simulation modeling of power supply systems for industrial consumers, as well as the need to have a set of statistical data for the implementation of machine learning [48,49]; • The potential capabilities for classifying PQI deviations from standard values in the event of complex emergency disturbances (distortions of sinusoidal voltage waveforms) and the impact of noise and interference [50]; • The volumes of necessary calculations and their high speed required when implementing PQI control devices based on software and hardware platforms; • The amount of memory required to store simulation results and other information for making decisions on classification of PQI deviations from standard values [51]; • The organization of special digital processing of current and voltage signals [52];…”