2022
DOI: 10.1109/tcsii.2022.3174622
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Memory Devices and A/D Interfaces: Design Tradeoffs in Mixed-Signal Accelerators for Machine Learning Applications

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Cited by 6 publications
(7 citation statements)
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“…3(b) the F-1T1R normalized current variation ∆I/I L vs I L . A large ∆I corresponds to a larger signal on the summation line, which relaxes the ADC specifications [2]. From the simulations, ∆I/I L is maximized in W.I.…”
Section: F-2t2r: a Novel Cell For Tia-less And Highly Parallel Rram-b...mentioning
confidence: 88%
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“…3(b) the F-1T1R normalized current variation ∆I/I L vs I L . A large ∆I corresponds to a larger signal on the summation line, which relaxes the ADC specifications [2]. From the simulations, ∆I/I L is maximized in W.I.…”
Section: F-2t2r: a Novel Cell For Tia-less And Highly Parallel Rram-b...mentioning
confidence: 88%
“…The scheme in Fig. 2(a) includes a digital-to-time D/A converter (DAC) to drive the gates of the MOS switches of the 1T1R cells, on the same row, with the pulse-width modulated (PWM) signal V DD • act i (t) 1 [2]. The length of the pulse is proportional to the activation value, i.e., T M AC • a i with a i ∈ [0, 1].…”
Section: F-2t2r: a Novel Cell For Tia-less And Highly Parallel Rram-b...mentioning
confidence: 99%
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