Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition

Xing, Huili Grace; Green, Daniel S.; Yu, Haijiang; Mates, Tom; Kozodoy, P.; Keller, S.; DenBaars, Steven P.; Mishra, Umesh K.

doi:10.1143/jjap.42.50

Cited by 168 publications

(97 citation statements)

References 15 publications

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“…The last quantum barrier is kept to be 12 nm to suppress the Mg diffusion. 27 Meanwhile, the quantum well thickness is 3 nm for all wells. Finally, a 0.2 lm p-GaN layer was grown, and the effective hole concentration is estimated to be 3 Â 10 17 cm À3 .…”

mentioning

confidence: 99%

On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

Zhang

Liu

et al. 2014

Applied Physics Letters

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Cataloged from PDF version of article.In this work, the origin of electron blocking effect of n-type Al 0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes. © 2014 AIP Publishing LLC

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mentioning

confidence: 99%

On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

Zhang

Liu

et al. 2014

Applied Physics Letters

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“…We believe that the BHF treatment improved the voltage by reducing Mg diffusion into the n ++ -GaN layer, which could compensate electron carriers required to form an abrupt junction. 15,19,21) Finally, the best results were obtained from the sample treated in BHF with in-situ activation prior to TJ regrowth, which showed voltages of 3.4 V at 20 A=cm 2 and 4.5 V at 1 kA=cm 2 . These J-V characteristics are reasonably close to those of a diode with the MOCVD-MBE hybrid TJ contacts reported by Young et al (3.05 V at 20 A=cm 2 ), 15) but the voltage of the MOCVD TJ sample could be increased owing to structural differences, including poor n-contact on lightly doped n-GaN and extra resistance from the substrate.…”

Section: ++mentioning

confidence: 98%

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

Lee

Forman

Lee

et al. 2018

Appl. Phys. Express

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We report the first demonstration of III-nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal-organic chemical vapor deposition (MOCVD). For the TJs, n ++ -GaN was grown on in-situ activated p ++ -GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of >15 mA (10 kA/cm 2 ), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

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“…The device structure was based around the conventional III-nitride LED fabrication processes and utilized the same metal-organic chemical vapor deposition (MOCVD) growth, lithography, etching and contacting steps. The MQW stack was placed under the n-and p-doped regions in order to avoid the magnesium (Mg) memory effect [43,44] in MOCVD and to avoid a dry etching of the p-doped layer. The electrically excited sample showed a strong blue emission at room temperature at 450nm wavelength with 160 mA injection current, corresponding to the emission from the InGaN AR.…”

Section: Diffusion Injected Buried Mqw Led (Diled)mentioning

confidence: 99%

Diffusion-Driven Charge Transport in Light Emitting Devices

Kim¹,

Kivisaari²,

Oksanen³

et al. 2017

Preprint

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Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses which arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto-and microelectronics.

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Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition

Cited by 168 publications

References 15 publications

On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

Diffusion-Driven Charge Transport in Light Emitting Devices

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