Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr 0.8 Bi 2.5 Ta 1.2 Nb 0.8 O 9 thin films

Huang, Chia Hsing; Wang, Yi Kai; Lue, Hang-Ting; Huang, Jun Yao; Lee, Ming Zi; Tseng, Tseung‐Yuen

doi:10.1016/s0955-2219(03)00635-6

Cited by 11 publications

(4 citation statements)

References 18 publications

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“…7−9 Bi-layered pseudoperovskite SBT ceramics have gained considerable attention as a promising ferroelectric material and are a suitable lead-free alternative for PZT ceramics in memory devices. 10,11 The SBT crystal structure comprises [Bi 2 O 2 ] 2+ layers and perovskite-type [SrTa 2 O 7 ] 2– units with double TaO 6 octahedral layers. SBT ceramics provide a high fatigue endurance, low switching voltage, and small polarization.…”

Section: Introductionmentioning

confidence: 99%

“…observed ferroelectricity in the series of Bi-layered perovskite ABi 2 B 2 O 9. As Bi-layered structure ferroelectrics serve a crucial role in dielectric and ferroelectric devices, their crystal structure and material properties have been investigated widely. − Bi-layered pseudoperovskite SBT ceramics have gained considerable attention as a promising ferroelectric material and are a suitable lead-free alternative for PZT ceramics in memory devices. , The SBT crystal structure comprises [Bi 2 O 2 ] 2+ layers and perovskite-type [SrTa 2 O 7 ] 2– units with double TaO 6 octahedral layers. SBT ceramics provide a high fatigue endurance, low switching voltage, and small polarization.…”

Section: Introductionmentioning

confidence: 99%

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Relationship between Crystal Structures and the Relaxor Property of SrBi₂(Ta_2–xV_x)O₉ Ceramics

Yang

2019

ACS Omega

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Here, V2O5 was used to substitute Ta2O5 in SrBi2Ta2O9 (SBT) and SrBi2(Ta2–xVx)O9 (SBTV) ceramics were formed. This study revealed that the substitution of Ta2O5 by V2O5 enhances the maximum dielectric constant (εm), increases the transition temperature, and reduces the sintering temperature of SBT ceramics. The diffraction intensity of c-axis-preferred orientation of SBTV ceramics increases with the increase in V2O5 concentration and sintering temperature. Disk-type grains were observed in the SBTV ceramics at higher sintering temperatures. By the Curie–Weiss law and modified Curie–Weiss law, the phase transitions of the SBTV ceramics were discussed. The dielectric properties of SBTV ceramics revealed that the relaxor-type ferroelectric characteristics became more obvious than the normal-type ferroelectric characteristics at high V2O5 concentrations and sintering temperatures. Raman spectroscopy was successfully used to study the lattice vibrational modes and structural transitions of SBTV ceramics. The spectra proved that as V2O5 was added to SBTV ceramics the octahedral TaO6 and VO6 structures exhibited a high frequency mode.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Relationship between Crystal Structures and the Relaxor Property of SrBi₂(Ta_2–xV_x)O₉ Ceramics

Yang

2019

ACS Omega

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“…The amount of conducting paths may not vary with increasing area of the top electrode, causing the leakage current of the H-state to remain almost the same [18]. Although there is no model that can well explain the resistance switching distinctly so far, most related reports [4,[18][19][20] proposed that the leakage current of the H-state is independent of the area of the top electrode. Figure 5 shows the plot of normalized leakage current versus stress time with various pulse widths.…”

Section: Resultsmentioning

confidence: 99%

“…Perovskite structured ceramics have been investigated for many applications such as gate dielectrics [1], dynamic random access memory (DRAM) [2], superconductor [3], ferroelectric memory [4] and tunable device [5]. Recently, perovskite ceramics have attracted much interest for their reversible resistance switching properties used for making resistive random access memory (RRAM) [6,7].…”

Section: Introductionmentioning

confidence: 99%

Resistance switching properties of sol–gel derived SrZrO₃based memory thin films

Liu

Tseng

2007

J. Phys. D: Appl. Phys.

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Sol–gel derived SrZrO3 based metal/insulator/metal (MIM) devices were fabricated to study their reversible resistance switching properties operated by dc voltage sweep and voltage pulses. The leakage-state of the device is changed from the original-state and finally switched between the high leakage-state (H-state) and the low leakage-state (L-state). The resistance ratio between the H-state and the L-state is about 104, and the leakage-states are not changed without power supply, which is suitable for nonvolatile memory application. The conduction mechanisms of the original-state, the H-state and the L-state obey Schottky emission, Frenkel–Poole emission and Ohmic conduction, respectively. The first device resistance switching, called the forming process, changed from the original-state to the H-state. The switching time from the H-state to the L-state is much longer than that from the L-state to the H-state and that of the forming process. The decay behaviours of leakage current after resistance switching are influenced by pulse width and voltage stress directions. The switching time can be accumulated to switch the device from the H-state to the L-state, which could be a guide to multi-level memory applications. The model of conducting paths can well explain the electrical behaviours of our resistance switching devices.

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Structural and electrical properties of SrBi2(Ta0.5Nb0.5)2O9 thin films

Amsei

Simões

Pianno

et al. 2008

Journal of Alloys and Compounds

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Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr 0.8 Bi 2.5 Ta 1.2 Nb 0.8 O 9 thin films

Cited by 11 publications

References 18 publications

Relationship between Crystal Structures and the Relaxor Property of SrBi₂(Ta_2–xV_x)O₉ Ceramics

Relationship between Crystal Structures and the Relaxor Property of SrBi₂(Ta_2–xV_x)O₉ Ceramics

Resistance switching properties of sol–gel derived SrZrO₃based memory thin films

Structural and electrical properties of SrBi2(Ta0.5Nb0.5)2O9 thin films

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Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr 0.8 Bi 2.5 Ta 1.2 Nb 0.8 O 9 thin films

Cited by 11 publications

References 18 publications

Relationship between Crystal Structures and the Relaxor Property of SrBi2(Ta2–xVx)O9 Ceramics

Relationship between Crystal Structures and the Relaxor Property of SrBi2(Ta2–xVx)O9 Ceramics

Resistance switching properties of sol–gel derived SrZrO3based memory thin films

Structural and electrical properties of SrBi2(Ta0.5Nb0.5)2O9 thin films

Contact Info

Product

Resources

About

Relationship between Crystal Structures and the Relaxor Property of SrBi₂(Ta_2–xV_x)O₉ Ceramics

Relationship between Crystal Structures and the Relaxor Property of SrBi₂(Ta_2–xV_x)O₉ Ceramics

Resistance switching properties of sol–gel derived SrZrO₃based memory thin films