2021
DOI: 10.1007/s00339-021-04851-9
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Memristive devices based on mass printed organic resistive switching layers

Abstract: Resistive random-access memory is a candidate for next-generation non-volatile memory architectures. In this study, we use flexographic roll-to-roll printing technology for deposition of the resistive layer, a printing method that allows fast and cost-effective fabrication to create non-volatile resistive memory devices. Metal-free organic polymers blends composed of poly(methyl methacrylate) (PMMA) and a surplus of poly(vinyl alcohol) (PVA) serve as the active layer. Microscopic studies of the roll-to-roll pr… Show more

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Cited by 11 publications
(2 citation statements)
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“…The resistive switching properties of various materials, including oxides, chalcogenides, , carbon, ,, perovskite/inorganic, and inorganic/organic, , have been extensively studied for their potential use in next-generation, nonvolatile memory applications. Among these materials, oxide-based memristors are considered to be essential owing to their nonvolatile properties. However, their large operating voltage, poor switching speed, and endurance limit their potential as practical devices.…”
mentioning
confidence: 99%
“…The resistive switching properties of various materials, including oxides, chalcogenides, , carbon, ,, perovskite/inorganic, and inorganic/organic, , have been extensively studied for their potential use in next-generation, nonvolatile memory applications. Among these materials, oxide-based memristors are considered to be essential owing to their nonvolatile properties. However, their large operating voltage, poor switching speed, and endurance limit their potential as practical devices.…”
mentioning
confidence: 99%
“…This includes devices that utilize spin-on-glass [26], [27] and TiO 2 as active layer [28]. On the other hand, almost all reported printed metal oxide memristors are introduced as bipolar resistive switching type [17], [23], [25], [28], [29], [30]. Furthermore, performance-relevant parameters such as endurance under pulsed voltage and the device variability are often not reported for solution-processed or printed devices [3].…”
mentioning
confidence: 99%