Memristive phase switching in two-dimensional 1T-TaS
            <sub>2</sub>
            crystals

Yoshida, Masaro; Suzuki, Ryuji; Zhang, Yijin; Nakano, Masaki; Iwasa, Yoshihiro

doi:10.1126/sciadv.1500606

Cited by 269 publications

(309 citation statements)

References 35 publications

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“…To demonstrate the pure electron doping effect on CDW, more direct doping experiments by negative perpendicular electric field or liquid-gated method should perform. Some works reported the suppression of CCDW by in-plane electric field [22][23][24][25][26]. By measuring the temperature dependence of resistivity (R − T ), Yoshida et al found the in-plane field cannot affect the NCCDW/ICCDW transition in R − T curve, but can introduce a metastable state with very low resistivity at low temperatures [24].…”

Section: Resultsmentioning

confidence: 99%

“…Some works reported the suppression of CCDW by in-plane electric field [22][23][24][25][26]. By measuring the temperature dependence of resistivity (R − T ), Yoshida et al found the in-plane field cannot affect the NCCDW/ICCDW transition in R − T curve, but can introduce a metastable state with very low resistivity at low temperatures [24]. If we consider that the R − T in CCDW, NCCDW, and ICCDW reflects the related structural characteristics, one can infer that the in-plane field induced the metastable state with different structural characteristics, i.e.…”

Section: Resultsmentioning

confidence: 99%

“…Yu et al reported a gate-controlled Li ion intercalation can suppress CCDW and introduce superconducivity [21]. Tsen et al [22], Hollander et al [23], Yoshida et al [24], and Mihailovic et al [25,26] reported the in-plane electric field induced transition from CCDW state to NCCDW or some metastable hidden state. Cho et al applied perpendicular electric pulse on 1T -TaS 2 and found positive electric pulse can introduce IC network to suppress Mott state at low temperature [27].…”

Section: Introductionmentioning

confidence: 99%

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Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Shao¹,

Xiao²,

Lu³

et al. 2016

Phys. Rev. B

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The transition metal dichalcogenide (TMD) 1T -TaS2 exhibits a rich set of charge density wave (CDW) orders. Recent investigations suggested that using light or electric field can manipulate the commensurate (C) CDW ground state. Such manipulations are considered to be determined by the charge carrier doping. Here we simulate by first-principles calculations the carrier doping effect on CCDW in 1T -TaS2. We investigate the charge doping effects on the electronic structures and phonon instabilities of 1T structure and analyze the doping induced energy and distortion ratio variations in CCDW structure. We found that both in bulk and monolayer 1T -TaS2, CCDW is stable upon electron doping, while hole doping can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric field induced hole doping increases the energy of CCDW, so that the system transforms to NCCDW or similar metastable state. On the other hand, even the CCDW distortion is more stable upon in-plain electric field induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from CCDW to nearly commensurate (NC) CDW or similar metastable state. We also estimate that hole doping can introduce potential superconductivity with Tc of 6 ∼ 7 K. Controllable switching of different states such as CCDW/Mott insulating state, metallic state, and even the superconducting state can be realized in 1T -TaS2, which makes the novel material have very promising applications in the future electronic devices.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Shao¹,

Xiao²,

Lu³

et al. 2016

Phys. Rev. B

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“…These studies have demonstrated the suppression of CDW phase transitions using polar electrolytes, as well as resistive switching between the different phases. As the material approaches the 2D limit, however, significant changes have been observed in the transport properties (4,5,8). However, the microscopic nature of the 2D state remains unclear.…”

mentioning

confidence: 99%

Structure and control of charge density waves in two-dimensional 1T-TaS ₂

Tsen

Hovden

Wang

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

237

259

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The layered transition metal dichalcogenides host a rich collection of charge density wave phases in which both the conduction electrons and the atomic structure display translational symmetry breaking. Manipulating these complex states by purely electronic methods has been a long-sought scientific and technological goal. Here, we show how this can be achieved in 1T-TaS 2 in the 2D limit. We first demonstrate that the intrinsic properties of atomically thin flakes are preserved by encapsulation with hexagonal boron nitride in inert atmosphere. We use this facile assembly method together with transmission electron microscopy and transport measurements to probe the nature of the 2D state and show that its conductance is dominated by discommensurations. The discommensuration structure can be precisely tuned in few-layer samples by an in-plane electric current, allowing continuous electrical control over the discommensuration-melting transition in 2D.two-dimensional materials | strongly correlated systems | charge density waves L ayered 1T-TaS 2 exhibits a number of unique structural and electronic phases. At low temperature and ambient pressure, the ground state is a commensurate (C) charge density wave (CDW). On heating, it undergoes a sequence of first-order phase transitions to a nearly commensurate (NC) CDW at 225 K, to an incommensurate (IC) CDW at 355 K, and finally to a metallic phase at 545 K. Each transition involves both conduction electron and lattice degrees of freedom-large changes in electronic transport properties occur, concomitant with structural changes to the crystal. By either chemical doping or applying high pressures, it is possible to suppress the CDWs and induce superconductivity (1-3). For device applications, it is desirable to control these phases by electrical means, but this capability is difficult to achieve in bulk crystals due to the high conduction electron density. Recent efforts to produce thin samples by mechanical exfoliation provide a new avenue for manipulating the CDWs in 1T-TaS 2 (4-8). These studies have demonstrated the suppression of CDW phase transitions using polar electrolytes, as well as resistive switching between the different phases. As the material approaches the 2D limit, however, significant changes have been observed in the transport properties (4,5,8). However, the microscopic nature of the 2D state remains unclear. In this work, we use transmission electron microscopy (TEM) together with transport measurements to develop a systematic understanding of the CDW phases and phase transitions in ultrathin 1T-TaS 2 . We find that charge ordering disappears in flakes with few atomic layers due to surface oxidation. When samples are instead environmentally protected, the CDWs persist and their transitions can be carefully tuned by electric currents.Both the atomic and CDW structure of 1T-TaS 2 can be visualized in reciprocal space by TEM electron diffraction (9, 10). In Fig. 1A, we show diffraction images taken from a bulk-like, 50-nm-thick crystal at low and room tem...

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“…19,20 In addition, electrostatic gating has been reported to exhibit some control over the transition temperatures. 21 While these CDW transitions are largely electronic rather than structural, their existence, and manipulation in layered materials suggests there may also be other materials and mechanisms for nonvolatility in very thin materials.…”

Section: Introductionmentioning

confidence: 99%

Theoretical potential for low energy consumption phase change memory utilizing electrostatically-induced structural phase transitions in 2D materials

Rehn

Pop

et al. 2018

npj Comput Mater

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Structural phase-change materials are of great importance for applications in information storage devices. Thermally driven structural phase transitions are employed in phase-change memory to achieve lower programming voltages and potentially lower energy consumption than mainstream nonvolatile memory technologies. However, the waste heat generated by such thermal mechanisms is often not optimized, and could present a limiting factor to widespread use. The potential for electrostatically driven structural phase transitions has recently been predicted and subsequently reported in some two-dimensional materials, providing an athermal mechanism to dynamically control properties of these materials in a nonvolatile fashion while achieving potentially lower energy consumption. In this work, we employ DFT-based calculations to make theoretical comparisons of the energy required to drive electrostatically-induced and thermally-induced phase transitions. Determining theoretical limits in monolayer MoTe 2 and thin films of Ge 2 Sb 2 Te 5 , we find that the energy consumption per unit volume of the electrostatically driven phase transition in monolayer MoTe 2 at room temperature is 9% of the adiabatic lower limit of the thermally driven phase transition in Ge 2 Sb 2 Te 5 . Furthermore, experimentally reported phase change energy consumption of Ge 2 Sb 2 Te 5 is 100-10,000 times larger than the adiabatic lower limit due to waste heat flow out of the material, leaving the possibility for energy consumption in monolayer MoTe 2 -based devices to be orders of magnitude smaller than Ge 2 Sb 2 Te 5 -based devices.

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Memristive phase switching in two-dimensional 1T-TaS ₂ crystals

Abstract: Electrical switching to multiple novel metastable states in a correlated two-dimensional crystal.

Cited by 269 publications

References 35 publications

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Structure and control of charge density waves in two-dimensional 1T-TaS ₂

Theoretical potential for low energy consumption phase change memory utilizing electrostatically-induced structural phase transitions in 2D materials

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Memristive phase switching in two-dimensional 1T-TaS 2 crystals

Abstract: Electrical switching to multiple novel metastable states in a correlated two-dimensional crystal.

Cited by 269 publications

References 35 publications

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Structure and control of charge density waves in two-dimensional 1T-TaS 2

Theoretical potential for low energy consumption phase change memory utilizing electrostatically-induced structural phase transitions in 2D materials

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Product

Resources

About

Memristive phase switching in two-dimensional 1T-TaS ₂ crystals

Structure and control of charge density waves in two-dimensional 1T-TaS ₂