Memristive Properties of GaN HEMTs Containing Deep‐Level Traps

Gomes, João L.; Nunes, Luís C.; Соболев, Н. А.; Pedro, José C.

doi:10.1002/pssb.201800387

Cited by 5 publications

(4 citation statements)

References 11 publications

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“…Some simulation key parameters have been fine-tuned: the energy level of acceptor traps (E TA ) in C-doped buffer is adjusted to E V +0.95 eV and the donor trap energy level (E TD ) is adjusted to E C −1.05 eV. The energy level of GaN is measured to be E C −1.10 eV in existing body of research [ 14 ], and the energy level of carbon doping of E V +0.9 eV has been extensively confirmed in previous studies [ 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 ]. The electrical measurements fit the simulation results well.…”

Section: Device Characterization and Simulationmentioning

confidence: 84%

Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode

et al. 2022

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In this study, a dedicated dynamic measurement system was used to investigate the transient capacitance and recovery process of AlGaN/GaN lateral Schottky barrier diodes (SBDs). With the consideration of acceptor traps in the C-doped buffer, the C-V characteristics and transient capacitance were measured and analyzed, and the results were simulated and explained by Silvaco TCAD (technology computer aided design). The ionization of acceptor traps and the change of electric potential were monitored in transient simulation to investigate the origin of the capacitance collapse in the SBD. The results suggest the significant impact of traps in the GaN buffer layer on the capacitance collapse of the device, and the secondary capture effect on the variation of acceptor ionization. Based on the study of transient capacitance of SBD, this work could be extended to the Miller capacitance in high electron mobility transistor (HEMT) devices. Moreover, the report on the stability of capacitance is essential for GaN devices, and could be further extended to other aspects of device research.

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Section: Device Characterization and Simulationmentioning

confidence: 84%

Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode

et al. 2022

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“…Regarding TCAD simulation, it is widely acknowledged that the UID GaN exhibits an n-type conductivity with incomplete ionization of donors and a modest leakage [22], whereas the carbon compensation doping in the buffer layer can induce deep-level acceptor traps [23]. It has been mentioned in the literature [24] that the energy level of E C −1.10 eV is measured in GaN, and the energy level of E V +0.9 eV caused by carbon doping has been confirmed in many instances in the literature [14][15][16]25,26]. Therefore, a donor trap of Ec −1.02 eV in the UID GaN layer and an acceptor trap of Ev +0.81 eV [14,15] in the C-doped buffer layer were set in the simulation.…”

Section: Device Characterization and Simulationmentioning

confidence: 88%

“…The charge trapping effects can influence the response time of capture and emission of free carriers. Taking the deep-level acceptor traps in the GaN buffer layer as an example, in the stress phase (Figure 2), the acceptor traps release holes under a high electric field, yielding negative space charges in the buffer layer [25][26][27][28], as shown in Figure 3b. The hole emission rate can be expressed as shown in Equation ( 1):…”

Section: Device Characterization and Simulationmentioning

confidence: 99%

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

et al. 2021

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This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the consideration of acceptor/donor traps in the C-doped buffer and GaN channel, and verified by Silvaco TCAD (technology computer aided design) simulations. The energy band, electric field, and electron concentration were monitored in the transient simulation to study the origin of the current collapse in the SBD. Using the verified model, the impact of carbon doping concentration in the buffer and the thickness of the unintentionally doped (UID) GaN channel in the transient behavior was estimated. Several observations were revealed. Firstly, the traps in the GaN channel and buffer layer have a significant impact on the current collapse of the device. A severe deterioration of current collapse can be observed in the SBDs with increasing density of acceptor-like traps. Secondly, the current collapse increases with the thinner UID GaN channel layer. This well-performed simulation model shows promise to be utilized for the dynamic performance optimization of GaN lateral devices.

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“…M. Orlova et al focused their efforts on studies of the influence of growth parameters on a‐plane InGaN/GaN heterostructures on r‐sapphire. J. Gomes et al have proven that GaN HEMTs containing deep‐level traps obey the two fundamental memristive criteria and suggested a deep‐level trapping‐related variable as the most probable hidden state variable.…”

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confidence: 99%