Memristive properties of transparent oxide semiconducting (Ti,Cu)O_x-gradient thin film

Abstract

The paper presents the results of the analysis of memristive properties observed in (Ti,Cu)-oxide thin film with gradient distribution of elements, prepared using the multi-source reactive magnetron co-sputtering process. The performed electrical measurements showed the presence of pinched hysteresis loops in the voltage-current plane for direct and alternating current bipolar periodic signal stimulation. Investigations performed using a transmission electron microscope equipped with an energy dispersive spectrometer showed that the elemental composition at the cross section of the thin film was very well correlated with the gradient V-shaped profile of the powering of the magnetron source equipped with a Cu target. The prepared samples were transparent in the visible part of optical radiation. The obtained results showed that the prepared gradient (Ti,Cu)O x thin film could be an interesting alternative to the conventional multilayer stack construction of memristive devices, which makes them a promising material for manufacturing transparent memory devices for transparent electronics.

Properties of Metallic and Oxide Thin Films Based on Ti and Co Prepared by Magnetron Sputtering from Sintered Targets with Different Co-Content

“…Sweeping the current allowed to observe the hysteresis loops, and as one can see in Figure 13 a–c, but the shape of each of the measured curves is distinct. In the case of the structures with (Ti,Co)Ox thin films containing lower Co concentration, a unipolar memristive-like effect can be observed, which is manifested by the memory loop with forward bias polarization ( Figure 13 a) [ 38 , 39 ]. The occurrence of such effects has not been reported so far in the case of TiO 2 coatings with the addition of Co. Usually, for these types of thin-film materials, a linear relationship between current and voltage is usually observed [ 15 , 20 ].…”

Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

“…The deposition system and the method for the preparation of gradient thin films have already been described in detail in [41][42][43][44][45]. The thin films were deposited via reactive magnetron co-sputtering, using two circular titanium targets (99.995%) and one circular copper target (99.995%).…”

“…Our previous works [ 41 – 42 ] have shown that an interesting alternative to the well-known conventional structures, with a multilayer stack of thin films with different electrical conducting and nonconducting properties described above, could be a thin film the composition of which changes along its thickness. So far, a memristive-like memory effect has been observed for thin film structures with a so-called V-type [ 41 ] or linear [ 42 ] gradient profile of the Cu distribution in (Ti–Cu)Ox thin films. In the present paper, the results for (Ti–Cu) oxide semiconducting thin films prepared with a U-shape distribution profile of copper are presented.…”

Investigation of memory effect in Au/(Ti-Cu)Ox-gradient thin film/TiAlV structure

“…The deposition system and the method for the preparation of gradient thin films with different profiles of element concentration have already been described in detail in [44][45][46][47][48] . The thin films were deposited in a reactive mode in the magnetron co-sputtering process, using two circular titanium targets (99.995%) and one circular copper target (99.995%).…”