2014
DOI: 10.1088/0268-1242/29/10/104010
|View full text |Cite
|
Sign up to set email alerts
|

Memristor-based ternary content addressable memory (mTCAM) for data-intensive computing

Abstract: A memristor-based ternary content addressable memory (mTCAM) is presented. Each mTCAM cell, consisting of five transistors and two memristors to store and search for ternary data, is capable of remarkable nonvolatility and higher storage density than conventional CMOS-based TCAMs. Each memristor in the cell can be programmed individually such that high impedance is always present between searchlines to reduce static energy consumption. A unique two-step write scheme offers reliable and energy-efficient write o… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
7
0

Year Published

2015
2015
2023
2023

Publication Types

Select...
6
2
1

Relationship

0
9

Authors

Journals

citations
Cited by 26 publications
(7 citation statements)
references
References 68 publications
0
7
0
Order By: Relevance
“…The authors proposed a memristor-based write operation to cope with the system noise in the memristor-based TCAM memory. In [27], Zheng et al proposed a memristor-based TCAM cell comprising of 2 memristors and 5 transistors for dataintensive computing. In a follow-up research [19], the authors studied the performance of RRAM-based TCAM for pattern matching applications.…”
Section: Related Workmentioning
confidence: 99%
“…The authors proposed a memristor-based write operation to cope with the system noise in the memristor-based TCAM memory. In [27], Zheng et al proposed a memristor-based TCAM cell comprising of 2 memristors and 5 transistors for dataintensive computing. In a follow-up research [19], the authors studied the performance of RRAM-based TCAM for pattern matching applications.…”
Section: Related Workmentioning
confidence: 99%
“…It is notable that many circuit designs feature a pair of anti-serially configured switches e.g., nano-crossbar memories [16], material implication [36], memristive Boolean logic [37], memristive retina [38], memistor implementation [39], synapse circuit with Hebbian learning [40], Hamming distance computation [41], mTCAM cells [42], and routing [43].…”
Section: Complementary Resistive Switches and Complementary Resimentioning
confidence: 99%
“…With an additional not in concern state, TCAM is mainly used for sparse coding, [6][7][8] IP routers, [9][10][11] and approximate computing 12,13) applications. As the scaling down of technology, large area, high leakage current and high latency 14,15) hinders the further development of the high-intensive CMOS-based TCAM. To overcome these obstacles, several studies proposed hybrid memristor-CMOS based TCAM using transistors as the comparison unit and emerging non-volatile memories as the storage element rather static random access memory (SRAM).…”
Section: Introductionmentioning
confidence: 99%