Memristor characteristics of a Ga–Al–O/Ga–Sn–O/Ga–Al–O stack device fabricated using mist chemical vapor deposition

Abstract

The biological human brain-mimicking neuromorphic computing systems have drawn great attention recently. Synaptic elements of the neuromorphic computing systems are required to have high integration capability consumption , low power, and low cost. We have realized a memristor characteristic of a Ga-Al-O/Ga-Sn-O/Ga-Al-O stack device using mist-chemical vapor deposition (mist CVD). The mist CVD method is a thin film fabrication technology with a safe, simple equipment configuration, and low-cost environmental impact. It is achieved that hysteresis I-V curves of memristor characteristics were certainly obtained, and electric resistance for the high resistance state (HRS) and the low resistance state (LRS) were stably repeated at least 500 times. The results suggest a possibility that Ga-Sn-O thin films by mist CVD methods can be a key component of neuromorphic computing systems.