Memristors based on thermal copper oxide

Resistive switching in FTO/CuO–Cu 2 O/Au memory devices

“…Moreover, cupric oxide (CuO) has been also reported to show bipolar memristive behaviour [9–11]. In copper oxide memristors, the active layer is often made by thermal annealing [12], or solution processing [13], which features inexpensive and low‐power operation [14]. The facile fabrication of copper oxide memristors is an advantage over other types of metal oxide memristors; however, further efforts are required to improve the stability, endurance, and retention time during the RS mechanism [15, 16].…”