2011 16th International Solid-State Sensors, Actuators and Microsystems Conference 2011
DOI: 10.1109/transducers.2011.5969160
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MEMS sensor with giant piezoresistive effect using metall-semiconductor hybrid structure

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Cited by 4 publications
(6 citation statements)
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“…Therefore, we have focused on obtaining S-N plots with narrower deviation by using out-of-plane bending vibration of a very thin membrane without patterning to reveal the intrinsic fatigue characteristics of silicon accurately [18,19]. Actually, it is incorrect to apply the reported fatigue properties of the etched beams for the lifetime prediction of membrane MEMS devices such as pressure sensors [20], microphones [21] and tunable filters [22] whose membrane thickness are often submicrometer, since they use a membrane structure without etched sidewalls. In our testing method, the specimen has a circular weight and multilayered membrane consisting of polysilicon of sub-micrometer thickness as the test material, SiO 2 and Si 3 N 4 to designate the fracture origins on the top surface of the polysilicon film and to control the resonant frequency.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, we have focused on obtaining S-N plots with narrower deviation by using out-of-plane bending vibration of a very thin membrane without patterning to reveal the intrinsic fatigue characteristics of silicon accurately [18,19]. Actually, it is incorrect to apply the reported fatigue properties of the etched beams for the lifetime prediction of membrane MEMS devices such as pressure sensors [20], microphones [21] and tunable filters [22] whose membrane thickness are often submicrometer, since they use a membrane structure without etched sidewalls. In our testing method, the specimen has a circular weight and multilayered membrane consisting of polysilicon of sub-micrometer thickness as the test material, SiO 2 and Si 3 N 4 to designate the fracture origins on the top surface of the polysilicon film and to control the resonant frequency.…”
Section: Introductionmentioning
confidence: 99%
“…Four pins are drawn from the silicon piezoresistive strip for connecting with metal pads. The outer two pins are used for constant The equivalent series resistance R ES (σ, n p , T) of aluminum-silicon hybrid structure of the sensor at different working stress (σ) and temperature (T) as well as doping concentration (n p ) can be expressed as [16][17][18][31][32][33]:…”
Section: Principle Of Composite Sensor Chipmentioning
confidence: 99%
“…When external tire pressure is exerted on the top surface of the sensor, as shown in figure 1, the main stress σ along the Y-axis direction corresponds to the [110] crystal direction will change the longitudinal and transverse resistivity, which are related to initial resistivity ρ 0 (n p , T) and piezoresistive coefficients [16,18]. Thus, the tensile strains along the width of aluminum-silicon hybrid structure due to pressure can deflect the current away from the aluminum shunt on account of this stress-induced anisotropy in the silicon conductivity [15][16][17][18]. This is principle of tire pressure measurement of composite sensor utilizing aluminum-silicon hybrid structure.…”
Section: Principle Of Composite Sensor Chipmentioning
confidence: 99%
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“…There are a number of MEMS devices that use a membrane structure such as pressure sensors, microphones and tunable filters. [12][13][14] For the lifetime prediction of these membrane devices, it is difficult to apply the reported reliability properties. Therefore, we have proposed and demonstrated a novel mechanical reliability testing method, dedicated to evaluating very thin membranes without patterning of the specimens.…”
Section: Introductionmentioning
confidence: 99%