Mercuric iodide in prospective

Bürger, A.; Nason, D.; Franks, L.A.

doi:10.1016/j.jcrysgro.2013.06.031

Cited by 14 publications

(17 citation statements)

References 28 publications

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“…9 The resistivity of 10 10 Ω·cm sufficiently satisfies the requirement of a α-HgI 2 based X-ray detector. 38 The photocurrent approaches 3.9 nA at 10 V bias under an X-ray exposure of 3.96 mR/min. And the photo/dark current ratio is 102.7, demonstrating the detector's significant response to Xray.…”

Section: ■ Experimental Sectionmentioning

confidence: 91%

Crystal Growth of α-HgI₂ by the Temperature Difference Method for High Sensitivity X-ray Detection

Zhang

Zheng

Chen

et al. 2015

Crystal Growth & Design

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α-HgI 2 is a promising material for room temperature X-ray detection. A facile temperature difference method is designed to grow 4 × 4 × 2 mm 3 α-HgI 2 bulk crystal from KI aqueous solution. Characterization results indicate the as-grown high quality crystals are single-crystalline and possess a standard bandgap (E g = 2.16 eV at 300 K) and high electrical resistivity (10 10 Ω·cm). Utilizing the as-grown crystal, moreover, a photoconductive type prototype X-ray detector is fabricated. The detector behaves at high X-ray sensitivity, which is improved by one order of magnitude in comparison with previous results from solution grown α-HgI 2 . In addition to α-HgI 2 , the crystal growth of other halides materials which are used for X-ray detection, e.g., PbI 2 , HgBr 2 , BiI 3 , may also benefit from the presented temperature difference method.

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Section: ■ Experimental Sectionmentioning

confidence: 91%

Crystal Growth of α-HgI₂ by the Temperature Difference Method for High Sensitivity X-ray Detection

Zhang

Zheng

Chen

et al. 2015

Crystal Growth & Design

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“…Although there are other candidates with high Z-value suitable for radiation detection, for example HgI 2 , the issues of difficulty in growing large scale crystals and controlling material quality have hindered their further applications. 35 It is indeed the progress in the photonics and electronics areas that drives the advancement of GaN, mainly from materials synthesize, which in turn benefits its applications in the relatively small market represented by the radiation detections. In addition, GaN is a superior material for optoelectronic applications, since it has a direct band-gap and can alloy with Al and In, representing a tunable bandgap value of 1.9 (InN) to 6.2 eV (AlN).…”

Section: A Basic Parametersmentioning

confidence: 99%

Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by 14N(n,p)14C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

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“…Mercuric iodide (HgI 2 ) is one of the most suitable semiconductor materials for γ-ray and X-ray detectors operating at room temperature because of its favorable characteristics, such as high atomic number of its constituent elements and large band gap (2.13 eV), resulting in a high photopeak efficiency [1][2][3]. High-energy radiation detectors have high resolution ability to γ-ray and X-ray at room temperature, which were fabricated with HgI 2 [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Coplanar-grid electrode design of HgI2 detector by finite elements simulation

Huang

et al. 2015

Materials Science in Semiconductor Processing

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Mercuric iodide in prospective

Cited by 14 publications

References 28 publications

Crystal Growth of α-HgI₂ by the Temperature Difference Method for High Sensitivity X-ray Detection

Crystal Growth of α-HgI₂ by the Temperature Difference Method for High Sensitivity X-ray Detection

Review of using gallium nitride for ionizing radiation detection

Coplanar-grid electrode design of HgI2 detector by finite elements simulation

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Mercuric iodide in prospective

Cited by 14 publications

References 28 publications

Crystal Growth of α-HgI2 by the Temperature Difference Method for High Sensitivity X-ray Detection

Crystal Growth of α-HgI2 by the Temperature Difference Method for High Sensitivity X-ray Detection

Review of using gallium nitride for ionizing radiation detection

Coplanar-grid electrode design of HgI2 detector by finite elements simulation

Contact Info

Product

Resources

About

Crystal Growth of α-HgI₂ by the Temperature Difference Method for High Sensitivity X-ray Detection

Crystal Growth of α-HgI₂ by the Temperature Difference Method for High Sensitivity X-ray Detection