MESFET models for microwave CAD applications

Abstract

A review of active device models for microwave CAD simulators is presented. Large‐signal, nonlinear models are of particular interest. The basic techniques employed in deriving equivalent circuit and physically based models are reviewed. Various methods for solving the semiconductor device equations to establish physically based models are indicated. Finally, it is proposed that physically based, analytic GaAs MESFET models offer an attractive compromise between simulation efficiency and quantitative accuracy. The use of such a model is demonstrated by several examples, including comparison with experimental data. These models are suitable for use in comprehensive CAD workstation environments and allow process‐type device models to be interfaced directly with RF circuit simulators.

Computer-aided design of RF and microwave circuits and systems

“…Equivalent-circuit element values for the intrinsic device were predicted from the model. Ladbrooke [64] described comprehensive physics-based equivalent-circuit models for MESFETs and HEMTs, taking into account surface effects and dispersive trapping phenomena [64] (see also [65] [66], [67] reported a model that is particularly suited to large-signal characterization of FETs.…”

“…However, even with the advent of powerful workstations and advanced numerical techniques, this class of model remains relatively slow, requiring many thousands of CPU seconds to simulate even a small number of bias points. Recent work has focused on EM interaction with the device, such as in Megahed and El-Ghazaly's work (see [67]). …”

Monolithic Microwave Integrated Circuits

“…The conventor and gate-source and the gate-drain capacitances. Some of tional Short, Open, Load, and Through (SOLT) calibration the most commonly referred models are Curtice, Curticetechnique has proven unsatisfactory because the open and Ettenberg, Stratz, Materka, and TOM (42)(43)(44). short reference planes cannot be precisely defined.…”

Neuro-space mapping technique for microwave device modeling and its use in circuit simulation and statistical design

“…This model is an analytical model but more useful device information may be gleaned from the value of the circuit elements. The second approach is more fundamental in nature and is based on a rigorous solution of the carrier transport equations over a representative geometrical domain of the device [74]- [77]. These models use numerical solution schemes to solve the carrier transport equations in semiconductors often accounting for hot electrons, quantum mechanics, EM, and thermal interaction.…”