Mesoporous germanium morphology transformation for lift-off process and substrate re-use

Boucherif, Abderraouf; Beaudin, Guillaume; Aimez, Vincent; Arès, Richard

doi:10.1063/1.4775357

Cited by 47 publications

(24 citation statements)

References 28 publications

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“…Recently, we have reported mesoporous Ge formation by an optimized bipolar electrochemical etching of p-type Ge wafers with dimensions between 4 and 10 nm. 40,41 This substantial reduction in dimensions compared to the bulk is expected to create light emitting structures with longer wavelengths than those previously reported by Armatas. 5 In this work, we show for the first time, tunable near-infrared photoluminescence emission from mesoporous Ge, with strong direct and indirect evidences of quantum confinement effects.…”

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confidence: 88%

Near-infrared emission from mesoporous crystalline germanium

et al. 2014

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Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites.

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confidence: 88%

Near-infrared emission from mesoporous crystalline germanium

et al. 2014

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“…Electrochemically formed porous GaAs nanostructures are particularly attractive for many applications due to their unique nanoscale properties and high surface-to-volume ratio. Furthermore, the applications of porous GaAs are very broad ranging from antireflective coating for GaAs solar cells [21], virtual substrate for InGaAs due to its weak elastic properties [22], and temporary carrier to reduce the weight of the solar cell by layer transfer processes [23, 24]. It was even shown that porous GaAs are good candidates to obtain fast response to humidity sensing [25].…”

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confidence: 99%

Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

et al. 2016

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We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer showed a major decrease in the CL intensity and a change in chemical composition and in the crystalline phase. Contrary to previous reports on p-GaAs porosification, which stated that the formed layer is composed of porous GaAs, we report evidence that the porous layer is in fact mainly constituted of porous As2O3. Finally, a qualitative model is proposed to explain the porous As2O3 layer formation on p-GaAs substrate.

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“…The effect of quantum confinement in the semiconductor NPs on the optical properties of semiconductors is mainly responsible for the growing interest as an attractive area of research. The interest in the basic semiconductor NPs of silicon and germanium is high as they show highly good luminescence properties at the nanoscale whereas there is no emission from them in their bulk form [3]. Further studies on Si and Ge-NPs are very interesting because of their size dependent optical properties which can lead to many technologically important applications such as optical light emitting devices [4], integrated flash memory devices [5] solar cell technology [6] and in biomedicine [7].…”

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confidence: 99%

Optical properties of germanium nanoparticles synthesized by pulsed laser ablation in acetone

et al. 2014

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We have successfully synthesized Ge NPs in acetone using pulsed laser ablation. • The average size of NPs is found to decrease with the increase in laser pulse energy. • The NP number density increases with the increase in pulse energy of the ablation. • Size dependent blue luminescence has been observed from the synthesized Ge NPs. • The shift in the Raman peak position has been interpreted as due to the quantum confinement and the strain in the NPs. • The measured NP sizes from the micro-Raman studies suggest that the phonon quantum confinement model is in good agreement with the TEM measurements of Ge NPs sizes. Germanium (Ge) nanoparticles (NPs) are synthesized by means of pulsed laser ablation of bulk germanium target immersed in acetone with ns laser pulses at different pulse energies. The fabricated NPs are characterized by employing different techniques such as UV-Visible absorption spectroscopy, photoluminescence, micro-Raman spectroscopy, transmission electron microscopy (TEM) and field emission scanning electron microscopy (FESEM). The mean size of the Ge NPs is found to vary from few nm to 40 nm with the increase in laser pulse energy. Shift in the position of the absorption spectra is observed and also the photoluminescence peak shift is observed due to quantum confinement effects. High resolution TEM combined with micro-Raman spectroscopy confirms the crystalline nature of the generated germanium nanoparticles. The formation of various sizes of germanium NPs at different laser pulse energies is evident from the asymmetry in the Raman spectra and the shift in its peak position toward the lower wavenumber side. The FESEM micrographs confirm the formation of germanium micro/nanostructures at the laser ablated position of the bulk germanium. In particular, the measured NP sizes from the micro-Raman phonon quantum confinement model are found in good agreement with TEM measurements of Ge NPs.

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Mesoporous germanium morphology transformation for lift-off process and substrate re-use

Cited by 47 publications

References 28 publications

Near-infrared emission from mesoporous crystalline germanium

Near-infrared emission from mesoporous crystalline germanium

Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

Optical properties of germanium nanoparticles synthesized by pulsed laser ablation in acetone

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