Mesoscale modeling of vacancy-mediated Si segregation near an edge dislocation in Ni under irradiation

Abstract

We use a continuum method informed by transport coefficients computed using self-consistent mean field theory to model vacancy-mediated diffusion of substitutional Si solutes in FCC Ni near

Comparing Structure-Property Evolution for Pm-Hip and Forged Alloy 625 Irradiated with Neutrons to 1dpa

“…Additionally, the lower dislocation line density in the PM-HIP material reduces the likelihood of capturing a dislocation within the APT needle volume. RIS of Si occurs when irradiation generates a vacancy supersaturation, which results in a driving vacancy flux that drags substitutional Si atoms towards dislocation cores due to positive Si-vacancy coupling [50].…”