Mesoscopic g-factor renormalization for electrons in III-V interacting nanolayers

Abstract

The physics of the renormalization of the effective electron g factor by the confining potential in semiconductor nanostructures is theoretically investigated. The effective g factor for electrons in structures with interacting nanolayers, or coupled quantum wells (QWs), is obtained with an analytical and yet accurate multiband envelopefunction solution, based on the linear 8 × 8 k • p Kane model for the bulk band structure. Both longitudinal and transverse applied magnetic fields are considered and the g-factor anisotropy (i.e., the difference between the two field configurations) is analyzed over the entire space spanned by the two structure parameters: the thickness of the active layers and the thickness of the tunneling barrier separating them. Two-dimensional anisotropy maps are constructed for symmetric and asymmetric InGaAs coupled QWs, with InP tunneling barriers, that reproduce exactly known single-layer or QW results, in different limits. The effects of the structure inversion asymmetry on the mesoscopic g-factor renormalization are also discussed, in particular the negative anisotropies for thin-layer structures. Such multilayer structures form an excellent testing ground for the theory, and the analytical solution presented, which is perfectly consistent over the whole space of parameters, leads to helpful expressions and can guide further research on the mechanisms of this mesoscopic renormalization.

Effect of external electric field on the electronic properties of the AlAs/SiC van der Waals heterostructure

“…[21][22][23] In recent years, III-V semiconductor materials have received widespread attention due to their excellent optoelectronic properties. [24][25][26][27][28][29][30][31][32][33] Their characteristics, such as high carrier mobility and wide band gap, make them an emerging force in semiconductor materials. For example, GaN and AIN have been widely used in the field of optoelectronics.…”

Gyromagnetic ratio of oriented hcp Co1−x Ir x soft magnetic films

“…Owing to the importance of γ and the increasing interest in spintronics and new schemes for quantum computation [15], γ has recently been the subject of many experimental and theoretical studies [11,13,[16][17][18][19]. In the experimental studies, quantum beating spectroscopy, Kerr rotation, and electrically detected electron spin resonance (ESR) techniques were primarily used for the investigation of γ; the electrically detected ESR technique is particularly suitable for precise measurements in magnetic films [7,14].…”

“…Moreover, the utilization of electric detection of ferromagnetic resonance (FMR) has recently demonstrated reliability and validity in the study of γ (measured using a direct current (dc) electrical method) in magnetic films [12,13,[18][19][20]. Because γ corresponds to the g factor, theoretical studies primarily investigate the g factor instead of γ [6,16]. For materials with considerably strong spin-orbital coupling, such as magnetic materials, g factor can be studied via their significant spin and orbital magnetic moments [21].…”

Electron ground state g factor in embedded InGaAs quantum dots: An atomistic study

“…Compared to its free-electron Dirac equation value of g 0 = 2, it can be significantly renormalized in solids, denoted by g * , as a result of the spin-orbit interaction [1,2]. Likewise, in semiconductor nanostructures such as quantum dots (QDs), yet another level of renormalization becomes operational by confining the carrier wave function around a heterogeneous region which accordingly tailors the orbital contribution [3], at the same time offering electrical tunability [4][5][6][7][8]. Among these structures, the self-assembled InGaAs QDs particularly stand out where a number of critical quantum technological milestones have been demonstrated, like indistinguishable single-photon sources [9], also on demand [10], spin-resolved resonance fluorescence [11], spin-photon interface [12], entangled photon pairs [13], entanglement swapping [14], as well as simultaneous antibunching and squeezing [15].…”