Metal-assisted chemical etching in HF/Na2S2O8 OR HF/KMnO4 produces porous silicon

Hadjersi, Toufik; Gabouze, N.; Kooij, Ernst S.; Zinine, A.; Ababou, A.; Chergui, W.; Cheraga, H.; Belhousse, S.; Djeghri, A.

doi:10.1016/j.tsf.2003.12.114

Cited by 49 publications

(28 citation statements)

References 12 publications

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“…In the subsequent etching procedure, the metal does not play a role. These results are in agreement with those reported previously by Hadjersi et al [7]. Figure 5 shows the dependence of PL spectra on the etching time.…”

Section: Resultssupporting

confidence: 93%

“…3). This morphology is quite different from that observed on Pd-metal assisted chemically etched PS obtained on high resistivity silicon [7]. Indeed, in the latter case, it shows the presence of a low density of macropores propagating into the bulk from the surface with no specific orientation relative to the underlying substrate crystal structure, indicating that macrodissolution is more favoured when Ag is deposited on the silicon surface.…”

Section: Resultscontrasting

confidence: 66%

“…Recently, we have used a new metal-assisted method, developed previously by Li et al [6] on doped Si samples. We demonstrated that Pd-assisted chemical etching allows the formation of a PS on highly resistive silicon [7]. The method does not need an external bias and enables formation of uniform PS layers more rapidly than the conventional stain etching method.…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence from undoped silicon after chemical etching combined with metal plating

Hadjesi

Gabouze

Yamamoto³

et al. 2005

phys. stat. sol. (c)

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PACS 68.37. Hk, 78.55.Mb, 81.05.Rm Photoluminescent porous layers were formed on highly resistive p-type silicon by metal-assisted chemical etching using Na 2 S 2 O 8 as an oxidizing agent. A thin layer of Ag was deposited on the (100) Si surface prior to immersion in a solution of HF and Na 2 S 2 O 8 . The morphology of the porous silicon (PS) layer formed by this method as a function of etching time was investigated by scanning electron microscopy (SEM). It shows that the surface is porous and the thickness of PS layer increases with etching time and is not limited as observed with the electrochemical method. Energy-dispersive X-ray (EDX) was used to analyse the chemical composition of PS layers. The EDX spectra show that the metal is not present on the PS surface after etching. Photoluminescence (PL) from metal-assisted chemically etched layers was measured using a He-Cd laser as excitation source. It was found that the PL intensity increases with increasing etching time. However, it was shown that after an etching time of 30min, the fit of the PL spectrum using Gaussian functions exhibits two peaks centred at 617 nm and 646 nm. This behaviour was attributed to an increase of the silicon nanostructure density.

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Section: Resultssupporting

confidence: 93%

Section: Resultscontrasting

confidence: 66%

Section: Introductionmentioning

confidence: 99%

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Photoluminescence from undoped silicon after chemical etching combined with metal plating

Hadjesi

Gabouze

Yamamoto³

et al. 2005

phys. stat. sol. (c)

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“…The approximate diameter of pores ranged from 1 to 1.6 um in diameter. This morphology is quite different from that observed on metal-assisted chemically etched PS obtained on high-resistivity silicon with 22.5 M HF-0.05 M Na 2 S 2 O 8 -H 2 O solution [19].…”

Section: Afm Studies Of Porous Siliconcontrasting

confidence: 84%

Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

et al. 2012

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Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H 2 O 2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H 2 O 2 . The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro-or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO 3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF 2 on a silicon surface.

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“…Metal-assisted chemical etching (MAE or MACE) is based on a localized oxidation and dissolution of silicon in HF in the presence of an oxidizing agent, whereas the metal (generally noble metal) catalytically enhances the etching process (Dimova-Malinovska et al 1997;Li and Bohn 2000;Xia et al 2000;Harada et al 2001;Chattopadhyay et al 2002;Peng et al 2002;Hadjersi et al 2004;Qiu et al 2005;Tsujino and Matsumura 2005a, b;Yae et al 2003). The Si underneath the metal is etched much faster than that without metal coverage.…”

Section: Introductionmentioning

confidence: 99%

Porous Silicon Formation by Metal Nanoparticle-Assisted Etching

Lévy‐Clément¹

2014

Handbook of Porous Silicon

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Metal-assisted chemical etching in HF/Na2S2O8 OR HF/KMnO4 produces porous silicon

Cited by 49 publications

References 12 publications

Photoluminescence from undoped silicon after chemical etching combined with metal plating

Photoluminescence from undoped silicon after chemical etching combined with metal plating

Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

Porous Silicon Formation by Metal Nanoparticle-Assisted Etching

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