Metal-assisted etching of p-type silicon under anodic polarization in HF solution with and without H2O2

Morphological Control of Periodic GaAs Hole Arrays by Simple Au-Mediated Wet Etching

“…On the basis of Ref. 20 and previously reported work function values, the etching rates of hole arrays catalyzed by Au and Pt-Pd in the present study showed qualitatively good agreement. The reported work functions are 5.1-5.28 eV for Au, 21,22 5.65 eV for Pt, 21 and 5.12-5.55 eV 21,22 for Pd.…”

“…In the metal-assisted chemical etching of Si, 14 higher etching rate is generally obtained by using a catalyst with a large work function. Chourou et al 20 discussed the rate of formation of porous Si in the etching of p-Si decorated by noble-metal particles as catalysts. In their study, they discussed the etching rate from the standpoints of the work function, the potential barrier (φ M ) between the valence band edge of bulk Si and the p-Si/metal interface, and h + injection toward the p-Si/metal interface.…”

Porous Silicon Formation by Metal Nanoparticle-Assisted Etching

“…The etching can be done in various HF solutions containing an oxidizing agent, typically H 2 O 2 (Li and Bohn 2000;Tsujino and Matsumura 2005a, b, 2006a, 2007Peng et al 2008;Huang et al 2007;Chartier et al 2008;Lee et al 2008;Megouda et al 2009a). Other oxidizing agents such as Fe(NO 3 ) 3 (Peng et al 2005b(Peng et al , 2006b), Mg(NO 3 ) 2 (Peng et al 2006b), Na 2 S 2 O 8 (Hadjersi et al 2004(Hadjersi et al , 2005aDouani et al 2008;Hadjersi 2007), KMnO 4 (Hadjersi et al 2004(Hadjersi et al , 2005aDouani et al 2008), K 2 Cr 2 O 7 (Douani et al 2008;Hadjersi et al 2005b;Waheed et al 2010), KBrO 3 or KIO 3 (Waheed et al 2010), Co(NO 3 ) 2 (Megouda et al 2009b), molecular O 2 dissolved in H 2 O (Yae et al 2003(Yae et al , 2005(Yae et al , 2006(Yae et al , 2008a(Yae et al , b, 2010a(Yae et al , 2012Masayuki et al 2011), and electrical holes, h + by anodization (Zhao et al 2007;Chouroua et al 2010;Huang et al 2010a), are also used. The deposited metals under the form of nanoparticles or colloidal particles or patterned thin film are most generally noble metals such as Ag (Hadjersi et al 2004(Hadjersi et al , 2005bTsujino and Matsumura 2005a, 2007Peng et al 2005...…”

Optical Properties of Porous Silicon*

“…Ogata and co-workers (Kawamura et al 2008;Chourou et al 2010) investigated the influence of metal nanoparticles on anodic etching of Si. Studies were performed with and without addition of H 2 O 2 to HF after the loading of a p-type Si(100) substrate with Ag, Pd, or Pt nanoparticles.…”