Metal–CdZnTe contact and its annealing behaviors

The comprehensive evaluation of the structural and functional properties of the gas- statically treated Au–CdZnTe–Au structures for X- and gamma-ray detectors

“…As one can see, the gas-static treatment leads to the increase of the defect and the donor-acceptor bands intensity in the LTPL spectra. Taking into account that fact that the [Au] 3 þ center can act as a donor Li et al, 2006), the increase in the intensity of the defect and donoracceptor bands after the processing can be explained by the increase of the concentration of the respective luminescence centers, [Au 3 þ V Cd 2 À ] þ in particular, via the reaction [Au] 3 þ þ[V Cd ] 2 À 2[Au 3 þ V Cd 2 À ] þ . Namely, during the gas-static treatment, the donors [Au] 3 þ and [Au 3 þ V Cd 2 À ] þ can compensate the Cd vacancies [V Cd ] 2 À , which leads to the improvement of the structural properties of the near contact regions, and thus, to the improvement of the contact quality.…”

The X-ray Radiation Response of CdZnTe Crystal Nuclear Detector

“…[4], [12] Research on the improvements of electrode contact, with the purpose of reducing detector leakage currents, has been reported. [5][6][7] On the purpose of getting a better ohmic contact between the contact and the CZT bulk, rapid temperature annealing (RTA) method had been adopted.…”

Atomic Structure and Electrical Properties of In(Te) Nanocontacts on CdZnTe(110) by Scanning Probe Microscopy

“…The nature of the metal–semiconductor (MS) interface depends to a large extent not only on defects, such as dislocations, twins, sub grain boundaries and precipitates, but also on the atomistic and electronic surface properties in the form of reconstructions and relaxations, density of steps, surface states, and position of the Fermi level. Since the latter sensitively depends on the surface‐preparation procedures, the performance of such MSM devices is a strong function of surface preparation,10, 11 metallization methods,12, 13 heat treatments,2 and the contact metal itself. Furthermore, interfacial reactions (leading to an intermediate phase formation) between the metal and the CdZnTe surface may facilitate an intimate contact with superior properties, or degrade the contact region with a detrimental effect on the device performance.…”

“…Surface orientation, morphology, stoichiometry (of both the substrate and the contact phase), and reconstruction (determined by surface thermodynamics, yet sensitive to the preparation procedures) may significantly influence the electron affinity in the contact region, and thus play an important role in the contact properties and behavior. Substrate temperature (in the course of deposition and subsequent heat treatments) is also among the preparation parameters that may strongly affect the electrical contact properties, via some critical interface processes, such as i) diffusion of metal and CdZnTe atoms, ii) metalCdZnTe phase formation, iii) oxide removal, and iv) adhesion force 13, 16–19. Surface stoichiometry and polarity20–22 may affect the contact properties (such as Schottky barrier height (SBH)), by modifying the pathways of interfacial reactions.…”