Cu is commonly modified with sulfur to obtain high selectivity
for formate since S can promote the formation of the key *OCHO intermediate
along the formate pathway. In the present work, we demonstrate that
Cu-vacancies on copper sulfide can surprisingly switch the formate
pathway to the CO pathway, and the concentration of Cu vacancies can
deterministically regulate the CO faradaic efficiency and partial
current density. The J
CO of SNC@Cu1.96S (Cu1.96S coated sulfur, nitrogen-co-doped carbon) can reach 37.2 mA cm–2 in an H cell,
which is the highest among the Cu-based catalysts and comparable to
other top CO production catalysts. According to DFT calculations,
the Cu vacancies formed in copper sulfide change the electronic structures
of the S sites in such a way that the H* takes a large Gibbs free
energy, which in turn suppresses the formation of formate. However,
the resulting fewer surface Cu cations and more surface S anions weakens
the adsorbate–metal interaction, synergizing the adsorption
structural transition of the surface intermediates from *OCHO (two
O–Cu bonds) to *COOH (one C–Cu bond) in favor of CO
production.