Metal contacts and electrical processes in amorphous diamond-like carbon films

Conduction mechanism for sputtered a-C:H based structures

“…All structures show symmetrical I-V characteristics for negative and positive applied voltages. Symmetrical I-V characteristics are indicative of a bulk limited conduction mechanism and of an ohmic character for Al contacts [20,21].…”

Formation and Characterization of Electric Contacts on CVD Diamond Films Prepared by Ion Implantation

“…The other, but maybe the most important difficulty with respect to the use of diamond as a semiconductor device is to create an appropriate ohmic and Schottky contact on the diamond surface. Research groups examined different metal layers and multilayers as contact layer [2][3][4][5][6][7][8][9], carbide contacts [10] but the problem is still unresolved yet. The best results were obtained by ion implantation techniques [11].…”

Bulk-limited electrical behaviors in metal/hydrogenated diamond-like carbon/metal devices

“…5,6 Usually, the metal/ semiconductor (DLC)/metal (MSM) structure would be fabricated for the cells or modules, which will significantly dominate the performance of electrical devices. [7][8][9][10][11][12] Unfortunately, due to the feature diversity of the DLC films deposited by different processing and the complexity of the interfacial interaction between metal and C elements, various mechanisms involving DLC/metal interface-limited and bulk-limited electrical behaviors were achieved for such MSM structured devices. Allon-Alaluf et al 8 reported that the DLC/metal interface-limited electrical behaviors originated from the formation of an interface barrier, when Al was used as upper and bottom contacts, which was conflicted with the bulk-limited electrical behaviors with the Al or Cr upper contact reported by Egret and co-workers.…”

“…[7][8][9][10][11][12] Unfortunately, due to the feature diversity of the DLC films deposited by different processing and the complexity of the interfacial interaction between metal and C elements, various mechanisms involving DLC/metal interface-limited and bulk-limited electrical behaviors were achieved for such MSM structured devices. Allon-Alaluf et al 8 reported that the DLC/metal interface-limited electrical behaviors originated from the formation of an interface barrier, when Al was used as upper and bottom contacts, which was conflicted with the bulk-limited electrical behaviors with the Al or Cr upper contact reported by Egret and co-workers. 13 In addition, Paul and Clough 12 found that for the MSM structure with the Cr bottom contact, both interface-limited and bulk-limited electrical behaviors appeared, depending on the area of the upper metal (Al, W, Ni, and Au) contacts.…”

“…Namely, one is Al, a typical weakcarbide-forming metal and inclined to form an interface barrier. 8 The other one is Cr, a typical strong-carbide-forming metal and inclined to form conductive carbides. 13 The MSM structures [as shown in Fig.…”