Metal-containing Materials as Turning Point of EUV Lithography

Simone, Danilo De; Pollentier, Ivan; Vandenberghe, Geert

doi:10.2494/photopolymer.28.507

Cited by 23 publications

(22 citation statements)

References 8 publications

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“…If this is possible by making use of metal atoms that have good EUV cross sectional absorption [3] in the resist formulation (MCR), the challenge is to keep a high performing switching solubility mechanism, maintain patterning fidelity and mitigate shot noise with a better tradeoff between sensitivity and line width roughness (LWR) when compared to CARs. Further, a possible introduction of MCRs in a high volume manufacturing (HVM) line opens new scenarios about the management of the wafers and tools at the contamination and process level [4]. MCRs need to demonstrate a high capacity to compete with traditional organic materials while showing no risk of cross metal contamination when exposed on EUV cluster tools.…”

Section: Introductionmentioning

confidence: 99%

Novel metal containing resists for EUV lithography extendibility

et al. 2016

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Strong interest has recently developed among the researchers in the use of metals in extreme ultraviolet (EUV) lithography photoresists [1,2] aiming to simultaneously achieve the resolution, line-width roughness and sensitivity (RLS) requirements for 10nm technology node and below and have the highest productivity with low exposure dose requirements (below 20mJ/cm2). In this paper two different metal containing resists (MCR) are discussed: the first one uses metal oxide nanoparticles (NP) bonded with ligands as an alternative non chemically amplified EUV photoresist; the second one introduces a metal species (the sensitizer) into a conventional chemically amplified EUV photoresist. In both cases, the metal is added to the resist system to increase the absorption of EUV photons as well as increase the generation of secondary electrons, thereby making more effective use of the dose. The initial work is focused on manufacturing compatibility, concerning metal cross-contamination, outgassing and hydrides formation risk. Next, lithographic performance is evaluated with respect to the RLS requirements by patterning on NXE:3300 full field scanner exposure tool, with particular emphasis on the material stability of different formulations.. Finally, imaging results at different processing conditions are also reported and discussed.

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Section: Introductionmentioning

confidence: 99%

Novel metal containing resists for EUV lithography extendibility

et al. 2016

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“…In addition to chemically amplified resists (CAR), metal containing resists (MCR) are a novel class of resist materials that have drawn a lot of attention for advanced EUV patterning for 1x nm technology. This material has shown a good resolution and roughness performance and can compete with CAR materials [2]. MCR have a high absorption coefficient and in order to allow enough light to Fig.…”

Section: Introductionmentioning

confidence: 99%

The Role of Underlayers in EUVL

Vanelderen¹,

Simone²,

Spampinato³

et al. 2018

J. Photopol. Sci. Technol.

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There is a growing awareness that underlayers (UL) are important in EUV lithography (EUVL). In previous lithography generations ULs were required to overcome reflectivity, however that is not a concern in EUVL. Nevertheless, surface interactions are becoming prevalent because the different layers of the stack are becoming thinner. This work focuses on the influence of the spin on carbon (SOC) layer used to print line-space patterns with metal containing resists (MCR). A significant impact of underlayers on the MCR performance in EUVL is demonstrated. There are large effects on the dose to size, resist profile and stochastic nanofailures. The main contributor is the interaction between photoresist and underlayer driven by the density of the SOC UL and, to a lesser extent, other chemical interactions. The key message is that underlayer effects cannot be neglected and should be considered when evaluating the lithographic performance of photoresist materials.

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“…5). The total electron yield of a non-chemically amplified metal containing resist (sample 6) with high lithographic performance [4] was evaluated. The TEY trend of such a photoresist across the entire energy spectrum is significantly different if compared to the TEY of previous samples 1 to 4.…”

Section: Photo Yieldmentioning

confidence: 99%

“…In previous work [4] we have reported the first assessment on the enablers of the MCRs from a manufacturing compatibility perspective (metal cross-contamination and outgassing at litho level). Thanks to the positive results of the initial assessment, the EUV lithographic performance and the etching properties were afterwards investigated.…”

Section: Introductionmentioning

confidence: 99%

Metal Containing Resist Readiness for HVM EUV Lithography

Simone¹,

Mao²,

Lazzarino³

et al. 2016

J. Photopol. Sci. Technol.

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The use of metals in extreme ultraviolet (EUV) lithography to have the highest productivity with low exposure dose requirements (below 20mJ/cm 2 ) has recently developed an increased interest. The motivation of using metals in the formulation of EUV photoresists stems from the high EUV cross sectional absorption of several metal species that give the opportunity to enhance the EUV absorbance capacity compared to a traditional pure organic resist and thus capture more productive photons, improving the resist sensitivity. The challenge is to keep a high performing switching solubility mechanism, to maintain patterning fidelity and to mitigate shot noise with a better tradeoff between sensitivity and line width roughness (LWR) when compared to a traditional resist. Further, a possible introduction of a metal containing resist (MCR) in a high volume manufacturing (HVM) line opens new scenarios at the contamination and process level about the management of the wafers and tools and MCRs need to demonstrate high capacity to compete with traditional organic photo materials.In this work we have looked at two different aspects of MCRs: the electron response as initial fundamental study on the light-photoresist interaction and the patterning performance in EUVL as manufacturability aspect of such a class of metal photoresists. The obtained results give indication that adding a metal into a CAR formulation may not be sufficient to increase the electron response of such a resist when exposed under the EUV light. Further, an MCR does not necessarily give good EUV lithographic performance, suggesting that the benefit from metals in terms of higher electron response or higher photon absorption can be fully realized only if the chemistry is right. On another hand, when the right chemistry is realized, we demonstrate that the litho-etch integration in a module is feasible for an MCR. In this paper the pattern transfer on stacked wafer for 22nm line-space dense features is successfully demonstrated using an MCR high imaging performance. Furthermore, the cross contamination results on an etch chamber tool are successfully presented. With the demonstrated etch capability, the metal containing resists move a step forward reducing the gap between the R&D and the manufacturing stage.

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Metal-containing Materials as Turning Point of EUV Lithography

Cited by 23 publications

References 8 publications

Novel metal containing resists for EUV lithography extendibility

Novel metal containing resists for EUV lithography extendibility

The Role of Underlayers in EUVL

Metal Containing Resist Readiness for HVM EUV Lithography

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