Metal diffusion properties of ultra-thin high-k Sc<sub>2</sub>O<sub>3</sub> films

Pachecka, Malgorzata; Lee, Chris; Sturm, Jacobus Marinus; Bijkerk, Frederik

doi:10.1063/1.5000030

Cited by 8 publications

(1 citation statement)

References 23 publications

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“…c) Bandgap diagrams and work function positions (dashed lines) of different TCOs, CBMs, TMOs, and FCMs with the c‐Si energy band edges (gray bar) as a reference. [ 112–133 ] d) Measured Schottky barrier heights of different TCOs, CBMs, and TMOs. [ 134–141 ] X‐ray photoelectron spectroscopy (XPS) spectra of e) nondoped, f) V‐doped, and g) Nb‐doped MoO 3− x films.…”

Section: Characterization Of Dfpc Materials With Key Parametersmentioning

confidence: 99%

Rational Approach for High‐Efficiency Dopant‐Free Solar Cells Characterized with Key Parameters

Kim,

Park,

Cho

et al. 2023

Solar RRL

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Crystalline silicon (c‐Si) solar cells have dominated the photovoltaic market due to their superior mechanical and thermal robustness, nonhazardous nature, optimal energy bandgap, and the availability of established manufacturing techniques. However, conventional c‐Si solar cells fabricated through thermal doping processes present challenges such as high recombination rates and increased production costs. Recently, dopant‐free solar cells have emerged as a promising next‐generation approach; they offer numerous advantages, such as reduced recombination, cost‐effectiveness, environmental friendliness, and applicability to nano‐ and submicrometer structures. This review evaluates the strengths and weaknesses of dopant‐free passivating contact materials for emitters, tracing the development of dopant‐free solar cells from the earliest reports to the current state‐of‐the‐art. A systematic evaluation of these materials based on their electrical and optical properties, coating conformality, stability, and overall photovoltaic performance is presented. Moreover, the limitations of dopant‐free solar cells are identified and strategies to further enhance their efficiency are proposed.

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Section: Characterization Of Dfpc Materials With Key Parametersmentioning

confidence: 99%

Rational Approach for High‐Efficiency Dopant‐Free Solar Cells Characterized with Key Parameters

Kim,

Park,

Cho

et al. 2023

Solar RRL

View full text Add to dashboard Cite

show abstract

Structural and Electrical Properties of Dy3+ and Ta5+ Co-Substituted (Hf, Zr)O2 Ceramics for Logic Devices

Sharma

Kumar

Mishra

et al. 2022

J. Electron. Mater.

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Sensing Performance Analysis of Passivated β-(AlxGa1-x)2 O3/Ga2O3 Schottky Diode Gas Sensor with Catalytic Metals at High Temperature

Mamataj,

Roy,

Datta

et al. 2024

J. Inst. Eng. India Ser. B

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Metal diffusion properties of ultra-thin high-k Sc₂O₃ films

Cited by 8 publications

References 23 publications

Rational Approach for High‐Efficiency Dopant‐Free Solar Cells Characterized with Key Parameters

Rational Approach for High‐Efficiency Dopant‐Free Solar Cells Characterized with Key Parameters

Structural and Electrical Properties of Dy3+ and Ta5+ Co-Substituted (Hf, Zr)O2 Ceramics for Logic Devices

Sensing Performance Analysis of Passivated β-(AlxGa1-x)2 O3/Ga2O3 Schottky Diode Gas Sensor with Catalytic Metals at High Temperature

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Metal diffusion properties of ultra-thin high-k Sc2O3 films

Cited by 8 publications

References 23 publications

Rational Approach for High‐Efficiency Dopant‐Free Solar Cells Characterized with Key Parameters

Rational Approach for High‐Efficiency Dopant‐Free Solar Cells Characterized with Key Parameters

Structural and Electrical Properties of Dy3+ and Ta5+ Co-Substituted (Hf, Zr)O2 Ceramics for Logic Devices

Sensing Performance Analysis of Passivated β-(AlxGa1-x)2 O3/Ga2O3 Schottky Diode Gas Sensor with Catalytic Metals at High Temperature

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Resources

About

Metal diffusion properties of ultra-thin high-k Sc₂O₃ films