“…Considering the future development of the 2D/2D vdW heterostructure, switching to new carbon nitride-based materials is essential to fully cultivate the benefits of 2D/2D configuration. Molecular engineering by doping (nonmetal, alkali metal, and single atoms), alteration of the coordination pattern (bridging N, C atoms, or azo linkages), insertion of N-rich units such as triazole units, and replacing the basic triazine/heptazine units with new construction units are some fundamental strategies to advancing the intrinsic physicochemical properties of carbon nitrides. , Several new variants of the C x N y family with an entirely different stoichiometric C:N ratio such as C 2 N, C 3 N, C 3 N 2 , C 3 N 3 , C 4 N 3 , C 3 N 5 , and C 3 N 6 and novel photophysical behavior have been synthesized in recent years to conquer the drawbacks of conventional C 3 N 4 . ,,, Another grueling issue with carbon nitride-based 2D/2D heterojunctions is the indigent surface adsorption of the reactant and poor adsorption–desorption kinetics. Surface engineering of carbon nitride by introducing certain functional groups/units with a high affinity for reactants can solve this problem.…”