Metal-ferroelectric-semiconductor characteristics of bismuth titanate films on silicon

Kalkur, T. S.; Kulkarni, J. R.; Lu, Yicheng; Rowe, M. W.; Han, W. Y.; Kammerdiner, L.

doi:10.1080/00150199108007937

Cited by 50 publications

(11 citation statements)

References 9 publications

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“…Several techniques such as rf sputtering, 10,11 pulsed laser deposition, 12,13 and electron cyclotron resonance plasma sputtering 14 have been employed to deposit good quality Bi 4 Ti 3 O 12 thin films. In the present case, thin films of Bi 4 Ti 3 O 12 were fabricated using the metalorganic solution deposition ͑MOSD͒ technique.…”

Section: Introductionmentioning

confidence: 99%

Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique

Joshi

Desu

1996

Journal of Applied Physics

131

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Structural and optical properties of laser deposited ferroelectric (Sr0.2Ba0.8)TiO3 thin films J. Appl. Phys. 79, 7965 (1996); 10.1063/1.362346Structural and dielectric studies of Pb(Mg1/3Nb2/3)O3-PbTiO3 ferroelectric solid solutions around the morphotropic boundary J. Appl. Phys. 79, 4291 (1996) Polycrystalline Bi 4 Ti 3 O 12 thin films having layered perovskite structure were fabricated by metalorganic solution deposition technique on both Pt-coated Si and bare Si substrates at a temperature as low as 500°C. The effects of post-deposition rapid thermal annealing on the structural and electrical properties were analyzed. The electrical measurements were conducted on metal-ferroelectric-metal capacitors. The typical measured small signal dielectric constant and dissipation factor at 100 kHz were 184 and 0.018 and the remanent polarization and the coercive field were 4.4 C/cm 2 and 84 kV/cm, respectively. The films exhibited high resistivity in the range 10 8 -10 12 ⍀ cm for films annealed at temperatures of 500-700°C for 10 s. The I -V characteristics were found to be Ohmic at low fields and space-charge-limited at high fields. A V 3/2 dependence of the current was observed in the space-charge region. This could be explained by assuming the mobility to be field dependent since in thin films the electric fields are invariably high even at low applied voltages.

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Section: Introductionmentioning

confidence: 99%

Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique

Joshi

Desu

1996

Journal of Applied Physics

131

View full text Add to dashboard Cite

show abstract

“…Nevertheless, as shown in Fig. 2(d), the widths of the hysteresis loops decrease rapidly at 650 • C. This may be due to that a thinner SiO 2 film is formed at the BTO/Si interface because the Si substrate is easy to be oxidized during the annealing process [20,21]. The SiO 2 layer can distribute a large part of the applied voltage because the dielectric constant of SiO 2 is as low as 3.9.…”

Section: Methodsmentioning

confidence: 88%

The influence of crystallization route on the Ce-doped Bi2Ti2O7 thin film by metal organic decomposition

Wang

Yang

et al. 2010

Journal of Alloys and Compounds

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“…1. A thin layer of silicon dioxide (SiO 2 ) layer of about 5 nm at the BPrT/Si interface was assumed to be extended during annealing in ambient air [5,6]. The thickness of the top and bottom electrode were both 8 nm.…”

Section: Methodsmentioning

confidence: 99%

Electrical properties of Pr-doped Bi4Ti3O12 thin films on Si substrate

Yang

Jiang

et al. 2004

Journal of Crystal Growth

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Metal-ferroelectric-semiconductor characteristics of bismuth titanate films on silicon

Cited by 50 publications

References 9 publications

Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique

Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique

The influence of crystallization route on the Ce-doped Bi2Ti2O7 thin film by metal organic decomposition

Electrical properties of Pr-doped Bi4Ti3O12 thin films on Si substrate

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