Metal film barriers against the evaporation of volatile components during the heat treatment of metal-compound semiconductor contacts

Mojzes, I.; Veresegyházy, R.; Kovács, Balázs; Pécz, B.; Malina, V.

doi:10.1016/0040-6090(88)90100-9

Cited by 11 publications

(5 citation statements)

References 5 publications

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“…The onset temperature of P evaporation we observed agrees well with previous QMS studies, 2 but the temperature of In droplet nucleation ͑480°C͒ differs from the value of 615°C found by Chu et al 4 by in situ optical microscopy. The reason for this difference is probably the application of a flowing H 2 atmosphere that provided some cooling and an extra pressure delaying evaporation, besides the uncertainty of the temperature measurements.…”

Section: Resultssupporting

confidence: 90%

Thermal decomposition of bulk and heteroepitaxial (100) InP surfaces: A combined in situ scanning electron microscopy and mass spectrometric study

Riesz¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Section: Resultssupporting

confidence: 90%

Thermal decomposition of bulk and heteroepitaxial (100) InP surfaces: A combined in situ scanning electron microscopy and mass spectrometric study

Riesz¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The choice of metals suitable as diffusion barriers for the Au-Be/X/Au contact scheme was made on the basis of our previous EGA studies (Mojzes et al 1988). In these experiments, InP substrates covered with Au, Cr/Au, Ti/Au, Pt/Au, Ni/Au and Pd/Au metal films were heat treated in a vacuum and the evaporation of volatile components (as a consequence of the interaction of Au with InP) was monitored in situ with a mass spectrometer.…”

Section: Effect Of Diffusion Barriermentioning

confidence: 99%

“…Electrical and metallurgical properties of this new Au-Be/Ru/Au contact scheme are studied as a function of material parameters, annealing conditions and an aging test at high temperatures. Effectiveness and thermal stability of the intermediate Ru layer as a diffusion barrier are discussed and compared with the properties of previously reported Cr, Ti, Ni and Pt barrier layers (Vandenberg and Temkin 1984, Mojzes et al 1988.…”

Section: Introductionmentioning

confidence: 99%

Au - Be/Ru/Au multilayer metallization as a stable ohmic contact scheme to p-type InP

Malina¹,

Moro²,

Micheli³

et al. 1996

Semicond. Sci. Technol.

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An attempt has been made to improve the electrical and metallurgical stability of Au-Be alloyed contacts to moderately doped p-type InP by minimizing the thickness of the Au-Be contact layer and using an Ru layer as a new, more effective diffusion barrier between the Au-Be and a thick Au top layer. It was found that the Au-Be contact layer only 40-50 nm thick is sufficient to give excellent ohmic contacts with specific contact resistance values as low as 2 × 10 −8 and 7 × 10 −8 m 2 (for N A -N D = (3-4) × 10 24 and (0.8-1) × 10 24 m −3 respectively). When subjected to an aging test at 280 • C for 50 h in N 2 gas, the 50 nm Au-Be/50 nm Ru/300 nm Au contacts alloyed at an optimum temperature of about 425 • C exhibit good thermal stability and no substantial increase in the specific contact resistance. The remarkable metallurgical stability of such contacts was confirmed by secondary neutral mass spectroscopy (SNMS) in-depth profile measurements. A comparison with the previously investigated diffusion barrier metals (such as Cr, Ti, Pt, etc) shows that the Ru layer is a much better barrier against the migration of Au into the InP substrate and, at the same time, it suppresses the out-diffusion of In and P from the semiconductor.

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“…A comparison of the novel Au-BeIRulAu contact system with previously reported gold-based contacts using the Cr, Pt, Ti and Ni as barrier metals (4,9) showed that the Ru layer is an excellent, more effective diffusion barrier. Sharp interfaces between layers depicted in the SNMS depth profiles of Fig.…”

Section: T Lo'[ T2 Minutesmentioning

confidence: 97%

“…Various technological measures have been proposed, in particular: (i) the amount of gold in the contact metallization should be minimized (6,7); (ii) barrier metals should be incorporated between the contact metallization and the outer Au pad (4,8,9); (iii) the rapid thermal processing (RTP) technique with its accurate isothermal temperature and time control should be used (5,lO). In our work, the first two suggestions were applied.…”

Section: General Approachmentioning

confidence: 99%

The role of Ru in improving Au-Be ohmic contacts to p-type InP

Malina¹,

Moro²

Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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Metal film barriers against the evaporation of volatile components during the heat treatment of metal-compound semiconductor contacts

Cited by 11 publications

References 5 publications

Thermal decomposition of bulk and heteroepitaxial (100) InP surfaces: A combined in situ scanning electron microscopy and mass spectrometric study

Thermal decomposition of bulk and heteroepitaxial (100) InP surfaces: A combined in situ scanning electron microscopy and mass spectrometric study

Au - Be/Ru/Au multilayer metallization as a stable ohmic contact scheme to p-type InP

The role of Ru in improving Au-Be ohmic contacts to p-type InP

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