Metal Gate Electrode for Advanced CMOS Application

The annealing effect on work function variation of WNxCy films deposited by remote plasma atomic layer deposition

“…As the feature size of the integrated circuits has continuously decreased, the complementary metal‐oxide‐semiconductor (CMOS) is affected by several critical properties such as boron penetration from the poly silicon gate to the gate oxide, polycrystalline silicon gate depletion, and high gate resistance, which causes resistance capacitance (RC) interconnection delay . Various metal gate materials such as metals, metal nitrides, metal carbides, and metal silicide are candidates to replace the current use of the poly‐Si gate electrode . Among the materials considered for metallic gate electrodes, there are the elemental metal gates but they have several drawbacks.…”