of optoelectronic devices such as solar cells, light-emitting diodes, lasers, photodetectors, and imagers. [1][2][3][4][5][6][7] These materials possess excellent photoelectric properties such as a tunable band gap, high optical absorption, long carrier diffusion length, and high carrier mobility. [8][9][10][11][12][13] Undoubtedly, various types of CsPbX 3 inorganic perovskite devices display satisfactory optoelectronic performance. However, in their practical application, there are still multiple obstacles to overcome, including poor stability, environmental pollution, high fabrication cost, and a complex technical process. [14][15][16][17] It is critical that a creative fabrication method capable of overcoming these issues is developed.Currently, the preparation of CsPbX 3 inorganic perovskite thin films predominantly relies on two traditional preparation methods. These are a liquid-phase reaction as used in spin coating and spray coating, etc., and a vapor-phase reaction such as chemical vapor deposition (CVD), and atmosphere reaction, etc. Both have inevitable shortcomings. In the liquid-phase method, precursor solution evaporation can cause poor surface coverage and internal channels which allow moisture into the internal structure, accelerating the decomposition of inorganic perovskite. [18] Furthermore, both liquid-phase and vapor-phase reactions cannot circumvent the production of large volumes of toxic gas from organic solutions and raw material evaporation, which are harmful to both the environment and workers. [19] In addition, some integrated optoelectronic devices including scintillators, display screens, and charge-coupled devices (CCD), require 2D high-precision arrays. [20] Whereas, their whole fabrication process based on traditional methods is quite expensive and complex, attributing to requirement of multistep positioning reaction of inorganic perovskite and advanced patterning techniques including E-beam lithography, photolithography, laser direct-write method, anodic aluminum oxide (AAO) template patterning, etc. [21][22][23] Consequently, adopting a solid-phase reaction method in place of traditional liquid-phase and vapor-phase reaction methods could essentially solve these issues.As we know, molecules vigorously diffuse under high temperature. Actually, only when molecule molar ratio of precursors are controlled exactly, and kept within a suitable reaction temperature, can a solid-phase reaction to produce CsPbX 3 inorganic perovskite be successful. Thus far, little attention has been paid Downsides such as pollution, stability, and cost limit the further optoelectronic applications of cesium lead halide inorganic perovskite thin films, prepared using traditional liquid-phase and vapor-phase reactions. This study investigates the preparation of inorganic perovskite CsPbI x Br 3−x (x = 0, 1, 2, 3) thin films based on a solid-phase reaction. Two solid-phase precursor thin films, with an appropriate thickness ratio, are deposited by pulsed laser deposition (PLD) and subsequently react under ...